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Abstract

Provided is a semiconductor device of higher density, thin thickness and low cost not plagued with low reliability ascribable to concentration of internal stress in an ultimate product. The semiconductor device includes a semiconductor element, and a support substrate arranged on a surface of the semiconductor element opposite to its surface provided with a pad. The support substrate is wider in area than the semiconductor element. The semiconductor device also includes a burying insulating layer on the support substrate for burying the semiconductor element in it, and a fan-out interconnection led out from the pad to an area on the burying insulating layer lying more peripherally outwardly than the semiconductor element; and a reinforcement portion arranged in a preset area above the outer periphery of the semiconductor element for augmenting mechanical strength of the burying insulating layer and the fan-out interconnection (FIG. 1 ).

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a semiconductor element;   a support substrate arranged on a surface of said semiconductor element opposite to a surface thereof provided with a pad; said support substrate being bigger in area than said semiconductor element;   a burying insulating layer on said support substrate for burying said semiconductor element therein;   a fan-out interconnection led out from said pad to an area on said burying insulating layer extending to an area lying more peripherally outwardly than said semiconductor element; and   a reinforcement portion via interconnection connected to at least one end of said semiconductor element without being connected to said fan-out interconnection.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein
 said reinforcement portion via interconnection is formed of the same material as that of said fan-out interconnection.   
     
     
         3 . The semiconductor device according to  claim 1 , wherein
 said reinforcement portion via interconnection has a modulus of elasticity higher than that of said fan-out interconnection.   
     
     
         4 . The semiconductor device according to  claim 1 , wherein
 said reinforcement portion is arranged in an area extending outwardly from a location directly above the outer periphery of said semiconductor element.   
     
     
         5 . The semiconductor device according to  claim 1 , wherein
 said reinforcement portion is arranged in an area extending by a distance up to twice a thickness of said semiconductor element from a location lying directly above an outer periphery of said semiconductor element.