Semiconductor Device

Abstract

Power amplifier circuits which constitute an RF power module used for a digital device capable of handling high frequency signals in two frequency bands are disposed over the same IC chip. The power amplifier circuits are disposed around the IC chip, and a secondary circuit is disposed between the power amplifier circuits. Thus, the power amplifier circuits are provided within the same IC chip to enable a size reduction. Further, the distance between the power amplifier circuits is ensured even if the power amplifier circuits are provided within the same IC chip. It is therefore possible to suppress the coupling between the power amplifier circuits and restrain crosstalk between the power amplifier circuits.

1 . (canceled) 
     
     
         2 . A radio frequency power module, comprising:
 a module board; and   a semiconductor chip comprising:   a first power amplifier circuit for first frequency band, and including a first amplifying stage, a second amplifying stage and a third amplifying stage;   a second power amplifier circuit for a second frequency band which is different from the first frequency band, and including a first amplifying stage, a second amplifying stage and a third amplifying stage;   a control circuit providing a bias voltage to the first to third amplifying stages of the first power amplifier and the first to third amplifying stages of the second power amplifier;   a first input terminal electrically coupled to the first amplifier circuit;   a first output terminal electrically coupled to the first amplifier circuit;   a second input terminal electrically coupled to the second amplifier circuit; and   a second output terminal electrically coupled to the second amplifier circuit.   
     
     
         3 . A radio frequency power module according to  claim 2 ,
 wherein the control circuit includes a bias circuit which provides the bias voltage.   
     
     
         4 . A radio frequency power module according to  claim 3 ,
 wherein the bias circuit is electrically coupled to inputs of the first to third amplifying stages of the first power amplifier, and electrically coupled to inputs of the first to third amplifying stages of the second power amplifier.   
     
     
         5 . A radio frequency power module according to  claim 4 ,
 wherein the semiconductor chip is composed of laterally diffused MOSFETs.   
     
     
         6 . A radio frequency power module according to  claim 5 ,
 wherein the semiconductor chip is mounted over the module board.   
     
     
         7 . A radio frequency power module according to  claim 6 , further comprising:
 a first matching circuit electrically coupled between the first amplifying stage and the second amplifying stage of the first power amplifier; and   a second matching circuit electrically coupled between the first amplifying stage and the second amplifying stage of the second power amplifier.   
     
     
         8 . A radio frequency power module for multiple frequency bands, comprising:
 a module board; and   a semiconductor chip mounted over the module board, the semiconductor chip comprising:   a first amplifier circuit for a first frequency band;   a second amplifier circuit for a second frequency band which is different from the frequency of the first frequency band; and   a control circuit controlling the first and second amplifier circuits, and including a bias circuit which provides a bias voltage to the first and second amplifier circuits;   wherein the semiconductor chip includes a first surface having a first side and a second side opposite the first side,   wherein the first amplifier circuit is arranged closer to the first side than the second side and arranged along the first side in plan view,   wherein the second amplifier circuit is arranged closer to the second side than the first side and arranged along the second side in plan view,   wherein the first power amplifier circuit includes a first amplifying stage, a second amplifying stage and a third amplifying stage; and   wherein the second power amplifier circuit includes a first amplifying stage, a second amplifying stage and a third amplifying stage.   
     
     
         9 . A radio frequency power module according to  claim 8 ,
 wherein the semiconductor chip is composed of laterally diffused MOSFETs.   
     
     
         10 . A radio frequency power module according to  claim 9 ,
 wherein the bias circuit is electrically coupled to inputs of the first to third amplifying stages of the first power amplifier, and electrically coupled to inputs of the first to third amplifying stages of the second power amplifier.   
     
     
         11 . A radio frequency power module according to  claim 10 , further comprising:
 a first matching circuit electrically coupled between the first amplifying stage and the second amplifying stage of the first power amplifier; and   a second matching circuit electrically coupled between the first amplifying stage and the second amplifying stage of the second power amplifier,   wherein the first matching circuit and the second matching circuit are mounted over the module board.