Semiconductor device

Abstract

A semiconductor device is disclosed that includes a support substrate, a first semiconductor element that is mounted on one side of the support substrate, a second semiconductor element including a high frequency electrode that is mounted on the one side of the support substrate, a via hole that is provided at the support substrate in relation to the high frequency electrode, and an external connection electrode that is provided on the other side of the support substrate in relation to the via hole.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate;   a first semiconductor element that is mounted on one side of the substrate;   a second semiconductor element including a first electrode that is mounted on the one side of the substrate;   a second electrode that is provided on the other side of the substrate connects to the first electrode with a via hole that penetrates through the substrate;   wherein the first electrode is positioned within a periphery of the via hole;   the second semiconductor element includes rewiring that forms a passive element; and   the substrate and the first semiconductor and the second semiconductor are integrally sealed by molded resin.   
     
     
         2 . The semiconductor device as claimed in  claim 1 , wherein
 the first semiconductor element is stacked on the second semiconductor element.   
     
     
         3 . The semiconductor device as claimed in  claim 1 , wherein
 the second semiconductor element includes a shield member that is set to ground potential.   
     
     
         4 . The semiconductor device as claimed in  claim 1 , wherein
 the second semiconductor element includes a pair of re-wiring structures that include portions that are parallel to each other.   
     
     
         5 . The semiconductor device as claimed in  claim 1 , wherein
 the second semiconductor element includes a set of re-wiring structures that have substantially equivalent wiring lengths.   
     
     
         6 . The semiconductor device as claimed in  claim 1 , wherein the via hole related to the first electrode has a diameter larger than a diameter of a second via hole connected to a third electrode an external connection terminal provided on an electrode pad of the second semiconductor element other than the first electrode; and
 the diameter of the via hole related to the first electrode is larger than a diameter of the external connection electrode of the second semiconductor element connecting to the via hole related to the first electrode.