LED Device with Embedded Top Electrode

Abstract

An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.

What is claimed is: 
     
         1 - 20 . (canceled) 
     
     
         21 . A light emitting diode (LED) device comprising:
 an active light-emitting layer;   a top contact layer having a top surface formed over the active light-emitting layer; and   a first top electrode at least partially embedded in the top contact and having a non-conductive bottommost surface, wherein the first top electrode electrically contacts the top contact layer.   
     
     
         22 . The LED device of  claim 21 , wherein the first top electrode comprises a metal, a metal alloy, a conductive material, or combinations thereof. 
     
     
         23 . The LED device of  claim 22 , wherein the conductive material is transparent. 
     
     
         24 . The LED device of  claim 21 , wherein the top contact layer includes a transparent conductive material and the first top electrode includes a metal material. 
     
     
         25 . The LED device of  claim 21 , further comprising:
 a bottom electrode;   a buffer layer formed over the bottom electrode; and   a bottom contact layer formed over the buffer layer, wherein the active light-emitting layer is formed over the bottom electrode, the buffer layer, and the bottom contact layer.   
     
     
         26 . The LED device of  claim 25 , wherein the buffer layer is reflective. 
     
     
         27 . The LED device of  claim 21 , further comprising a conductive web connecting the first top electrode and a second top electrode in the top contact layer. 
     
     
         28 . The LED device of  claim 27 , wherein the conductive web comprises a metal, a metal alloy, a conductive material, or combinations thereof. 
     
     
         29 . A method of forming a light emitting diode (LED) device, the method comprising:
 forming an active light-emitting layer over a substrate;   forming a top contact layer over the active light-emitting layer;   patterning the top contact layer to form a first trench therein;   forming a top electrode within the first trench, wherein the top electrode has a non-conductive bottommost surface.   
     
     
         30 . The method of  claim 29 , wherein the top electrode comprises a metal, a metal alloy, a conductive material, or combinations thereof. 
     
     
         31 . The method of  claim 29 , wherein forming the top electrode within the first trench includes:
 forming a dielectric material layer in the first trench; and   depositing a conductive material layer over the dielectric material layer in the first trench.   
     
     
         32 . The method of  claim 29 , wherein patterning the top contact layer to form the first trench therein includes patterning the top contact layer to form a second trench therein. 
     
     
         33 . The method of  claim 29 , wherein forming the top electrode within the first trench includes:
 forming a dielectric material layer in the first trench and the second trench;   removing the dielectric material layer from the second trench; and   depositing a conductive material layer in the second trench and over the dielectric material layer in the first trench.   
     
     
         34 . The method of  claim 29  further comprising:
 forming a bottom electrode over the substrate; 
 forming a buffer layer over the bottom electrode; and 
 forming a bottom contact layer formed over the buffer layer, wherein the active light-emitting layer is formed over the bottom electrode, the buffer layer, and the bottom contact layer. 
 
     
     
         35 . A light emitting diode (LED) structure comprising:
 a top contact layer; and   an electrode partially embedded in the top contact layer, wherein the electrode has a non-conductive bottommost surface.   
     
     
         36 . The LED structure of  claim 35 , wherein the electrode comprises a metal, a metal alloy, a conductive material, or combinations thereof. 
     
     
         37 . The LED device of  claim 35 , wherein the conductive material is transparent. 
     
     
         38 . The LED device of  claim 35 , wherein the top contact layer includes a transparent conductive material and the first top electrode includes a metal material. 
     
     
         39 . The LED structure of  claim 35 , wherein the electrode has a top surface that is non-coplanar with a top surface of the top contact layer. 
     
     
         40 . The LED structure of  claim 39 , wherein the top surface of the electrode is recessed relative to the top surface of the top contact layer.