Method of repairing probe pads

Abstract

A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced.

1 . A method, comprising:
 forming circuitry on a substrate;   forming a first probe pad electrically connected to the circuitry, the first probe pad having a first surface;   contacting the first probe pad with a probe device, the probe device displacing a portion of the first probe pad above the first surface; and   planarizing the first probe pad to remove the portion of the first probe pad above the first surface.   
     
     
         2 . (canceled) 
     
     
         3 . The method of  claim 1 , further comprising:
 forming a dielectric layer on the first probe pad;   forming a second probe pad above the dielectric layer, the second probe pad having a second surface;   contacting the second probe pad with the probe device, the probe device displacing a portion of the second probe pad above the second surface; and   planarizing the second probe pad to remove the portion of the second probe pad above the second surface.   
     
     
         4 . The method of  claim 3 , further comprising forming the first probe pad in a kerf region of the substrate and forming the second probe pad in a die region of the substrate. 
     
     
         5 . The method of  claim 3 , further comprising forming the first and second probe pads in a die region of the substrate. 
     
     
         6 . The method of  claim 3 , further comprising forming the first and second probe pads in a kerf region of the substrate. 
     
     
         7 . The method of  claim 1 , further comprising forming a passivation layer overlying the first probe pad prior to contacting the first probe pad. 
     
     
         8 . The method of  claim 7 , further comprising forming an opening in the passivation layer overlying the first probe pad, the probe device directly contacting the first probe pad through the opening. 
     
     
         9 . The method of  claim 8 , wherein the planarizing includes removing the passivation layer while removing the portion of the first probe pad above the first surface. 
     
     
         10 . The method of  claim 7 , wherein contacting the first probe pad includes pushing the probe device through the passivation layer and displacing a portion of the passivation layer with the portion of the first probe pad. 
     
     
         11 . The method of  claim 10 , wherein the planarizing includes removing the passivation layer and the portion of the passivation layer. 
     
     
         12 . A method, comprising:
 forming an integrated circuit component on a wafer;   coupling a probe pad of a conductive material to the integrated circuit component, the probe pad having a surface;   probing the probe pad with a probe device that displaces a portion of the conductive material above the surface of the probe pad; and   removing the portion of the conductive material above the surface of the probe pad with a chemical mechanical polish.   
     
     
         13 . The method of  claim 12 , further comprising forming a passivation layer overlying the probe pad prior to probing the probe pad. 
     
     
         14 . The method of  claim 13 , further comprising forming an opening in the passivation layer overlying the probe pad, the probe device directly contacting the probe pad through the opening. 
     
     
         15 . The method of  claim 14 , further comprising removing the passivation layer during the chemical mechanical polish to remove the portion of the conductive material above the surface of the probe pad. 
     
     
         16 . The method of  claim 1  wherein the planarizing includes performing a chemical mechanical polish. 
     
     
         17 . The method of  claim 1  wherein the contacting includes forming an indentation in the first surface of the first probe pad. 
     
     
         18 . The method of  claim 17  wherein a portion of the indentation remains after the planarizing. 
     
     
         19 . The method of  claim 10  wherein pushing the probe device through the passivation layer includes forming an indentation in the first surface and pushing a portion of the passivation layer into the indentation. 
     
     
         20 . The method of  claim 19  wherein after the planarizing the portion of the passivation layer remains in the indentation.