Method of manufacturing thin film capacitor and thin film capacitor

Abstract

A method of manufacturing a thin film capacitor, having: a base electrode; dielectric layers consecutively deposited on the base electrode; an internal electrode deposited between the dielectric layers; an upper electrode deposited opposite the base electrode with the dielectric layers and the internal electrode being interposed therebetween; and a cover layer deposited on the upper electrode, has depositing an upper electrode layer which is to be the upper electrode, and a cover film which is to be the cover layer on the unsintered dielectric film which is to be the dielectric layer, to fabricate a lamination component, and sintering the lamination component.

What is claimed is: 
     
         1 . A method of manufacturing a thin film capacitor, having a base electrode, a dielectric layer deposited on the base electrode, an upper electrode deposited opposite the base electrode with the dielectric layer being interposed therebetween, and a cover layer deposited on the upper electrode,
 the method comprising;   fabricating a lamination component comprising an unsintered dielectric film which is to be the dielectric layer on which an upper electrode layer which is to be the upper electrode and a cover film which is to be the cover layer are deposited; and   sintering the lamination component.   
     
     
         2 . The method of manufacturing a thin film capacitor according to  claim 1 , wherein the cover film comprises material of the same composition as the dielectric film. 
     
     
         3 . The method of manufacturing a thin film capacitor according to  claim 1 , further comprising patterning the sintered lamination component and providing a terminal electrode.