Heat radiation dissipation film structure and method of making the same

Abstract

Disclosed are a heat radiation dissipation film structure and a method of making the same. The heat radiation dissipation film structure includes a substrate which is electrically insulated and a heat radiation dissipation film disposed on the substrate. The difference between the thermal expansion coefficients of the substrate and the heat radiation dissipation film is not greater than 0.1%. The heat radiation dissipation film contains the crystal of at least one metal and nonmetal with a specific microscopic surface structure which is formed by spraying and coating the heated mixture onto the substrate under high pressure. The heat radiation from the heat radiation dissipation film is directed from the interface of the heat radiation dissipation film and the substrate towards the substrate.

What is claimed is: 
     
         1 . A heat radiation dissipation film structure, comprising:
 a substrate electrically insulated, having a first thermal expansion coefficient; and   a heat radiation dissipation film disposed on the substrate, having a first surface and a second surface opposing to the first surface and in contact with the substrate,   wherein the heat radiation dissipation film has a second thermal expansion coefficient, the heat radiation dissipation film is made from a mixture of metal and nonmetal, the first surface has a microscopic structure, a heat radiation from the heat radiation dissipation film is directed from an interface of the heat radiation dissipation film and the substrate towards the second surface, a difference between the first thermal expansion coefficient and the second thermal expansion coefficient is not greater than 0.1%, the mixture of metal and nonmetal comprises a metal compound and a nonmetal compound, and the metal compound comprises at least one of silver, copper, tin, aluminum, titanium, iron and antimony, or at least one alloy of silver, copper, tin, aluminum, titanium, iron and antimony, or at least one oxide or halide of silver, copper, tin, aluminum, titanium, iron and antimony.   
     
     
         2 . The heat radiation dissipation film structure as claimed in  claim 1 , wherein the nonmetal compound comprises an oxide, nitride or inorganic salt of at least one of boron and carbon, and the microscopic structure of the heat radiation dissipation film includes crystal with a grain size between 2 nm and 1 μm. 
     
     
         3 . The heat radiation dissipation film structure as claimed in  claim 2 , wherein the crystal is a global or polyhedral grain. 
     
     
         4 . A method of making a heat radiation dissipation film structure, comprising:
 preparing a metal compound, a nonmetal compound and at least one solvent, wherein the metal compound comprises at least one of silver, copper, tin, aluminum, titanium, iron and antimony, or at least one alloy of silver, copper, tin, aluminum, titanium, iron and antimony, or at least one oxide or halide of silver, copper, tin, aluminum, titanium, iron and antimony;   mixing the metal compound, the nonmetal compound and the at least one solvent to form a mixture of metal and nonmetal;   pressuring the mixture of metal and nonmetal up to a first amount of pressure to form a pressurized mixture, and storing the pressurized mixture;   preparing a substrate which is electrically insulated and has a first thermal expansion coefficient;   heating the substrate to a first temperature;   spraying and coating the pressurized mixture onto the heated substrate such that a heat radiation dissipation film is formed on the heated substrate through crystal growth by the pressurized mixture; and   cooling the substrate and the heat radiation dissipation film on the substrate to a room temperature so as to form the heat radiation dissipation film structure comprising the substrate and the heat radiation dissipation film,   wherein the heat radiation dissipation film has a second thermal expansion coefficient, and a difference between the first thermal expansion coefficient of the substrate and the second thermal expansion coefficient of the heat radiation dissipation film is not greater than 0.1%.   
     
     
         5 . The method as claimed in  claim 4 , wherein the nonmetal compound consists of an oxide, nitride or inorganic salt of at least one of boron and carbon. 
     
     
         6 . The method as claimed in  claim 4 , wherein the at least one solvent consists of at least one of water, alcohol compound, ketone and inorganic acid. 
     
     
         7 . The method as claimed in  claim 4 , wherein the first amount of pressure is between 0.2 MPa and 10 MPa, and the first temperature is between 250° C. and 1300° C. 
     
     
         8 . The method as claimed in  claim 4 , wherein the heat radiation dissipation film has a microscopic structure of the heat radiation dissipation film containing crystal with a grain size between 2 nm and 1 μm. 
     
     
         9 . The method as claimed in  claim 8 , wherein the crystal consists of a global or polyhedral grain.