Light emitting devices including wavelength converting material

Abstract

Light-emitting devices and associated methods are provided. The light emitting devices can have a wavelength converting material-coated emission surface.

1 . A light emitting device comprising:
 a multi-layer stack of material including a n-doped region, an p-doped region and a light generating region disposed between the n-doped and p-doped regions, wherein at least a portion of the light generated from the light generating region emerges from the light emitting device via a top emission surface of the multi-layer stack of materials; and   a wavelength converting material layer disposed according to a pattern on the top emission surface of the multi-layer stack of material, wherein sidewalls of the multi-layer stack of material are substantially devoid of the wavelength converting material.   
     
     
         2 . The light emitting device of  claim 1 , wherein the wavelength converting material is phosphor. 
     
     
         3 . The light emitting device of  claim 1 , wherein the light emitting device is configured to emit white, green, blue, red, amber, cyan, yellow, UV and IR light. 
     
     
         4 . The light emitting device of  claim 1 , wherein greater than 50% of the emitted light emerges from the light emitting device via the top emission surface. 
     
     
         5 . The light emitting device of  claim 1 , wherein greater than 75% of the emitted light emerges from the light emitting device via the top emission surface. 
     
     
         6 . The light emitting device of  claim 1 , wherein greater than 90% of the emitted light emerges from the light emitting device via the top emission surface. 
     
     
         7 . The light emitting device of  claim 1 , wherein the pattern comprises a plurality of discrete features. 
     
     
         8 . The light emitting device of  claim 1 , wherein the pattern comprises a plurality of stripes. 
     
     
         9 . The light emitting device of  claim 1 , wherein greater than 50% of light emitted at a first wavelength is converted to a desired second wavelength by the wavelength converting material. 
     
     
         10 . The light emitting device of  claim 1 , wherein greater than 75% of light emitted at a first wavelength is converted to a desired second wavelength by the wavelength converting material. 
     
     
         11 . The light emitting device of  claim 1 , wherein greater than 90% of light emitted at a first wavelength is converted to a desired second wavelength by the wavelength converting material. 
     
     
         12 . The light emitting device of  claim 1 , wherein the pattern is pre-determined. 
     
     
         13 . A method of controlling color point of a wafer, comprising the steps of:
 providing a wafer configured for emitting light;   determining a desired color point of light emitted by said wafer;   determining the applied thickness and/or pattern of a wavelength converting material to achieve said desired color point; and   forming a layer of wavelength converting material having the determined thickness and/or pattern on a top surface of the wafer.   
     
     
         14 - 15 . (canceled) 
     
     
         16 . A method of forming a light emitting device, comprising the steps of:
 providing a multi-layer stack of material;   disposing a wavelength converting material on a top surface of the multi-layer stack of material; and   dicing the multi-layer stack of material into a plurality of mesas.   
     
     
         17 - 19 . (canceled) 
     
     
         20 . A light emitting device comprising:
 a multi-layer stack of material including a n-doped region, an p-doped region and a light generating region disposed between the n-doped and p-doped regions, wherein a portion of the light generated from the light generating region emerges from the light emitting device via a top emission surface of the multi-layer stack of materials;   a first wavelength converting material region disposed on at least a portion of the top emission surface and a second wavelength converting material region disposed on at least a portion of the emission surface, wherein the first wavelength converting material is configured to emit light at a different frequency than the second wavelength converting material.   
     
     
         21 - 22 . (canceled) 
     
     
         23 . A light emitting device comprising:
 a multi-layer stack of material including a n-doped region, an p-doped region and a light generating region disposed between the n-doped and p-doped regions, wherein at least a portion of the light generated from the light generating region emerges from the light emitting device via a top emission surface of the multi-layer stack of materials, wherein a plurality of recesses are formed in the top emission surface; and   a wavelength converting material layer disposed in the recesses in the top emission surface.   
     
     
         24 - 27 . (canceled)