Shadow mask, method of manufacturing the same and method of forming thin film using the same

Abstract

A shadow mask, a method of manufacturing the shadow mask, and a method of forming a thin film using the shadow mask are provided. The shadow mask includes an upper layer and a lower layer. The upper layer includes a first opening. The lower layer is formed on a lower surface of the upper layer around the first opening and includes an opening having the same size as the first opening. When the thin film is formed using the shadow mask, the lower layer of the shadow mask is close to the edge of a cavity of a substrate, and a position on which the thin film may be formed as defined by the lower layer of the shadow mask. Therefore, the thickness of the thin film can be uniform.

1 . A method of manufacturing a shadow mask, the method comprising:
 preparing a stacked substrate in which a lower layer, a middle layer, and an upper layer are sequentially stacked;   forming a first opening in the upper layer so as to expose the middle layer;   etching the lower layer to remove a region of the lower layer corresponding to the first opening and to make an outer periphery of the lower layer smaller than an outer periphery of the upper layer; and   removing a portion of the middle layer exposed when the upper layer and the lower layer are etched.   
     
     
         2 . The method of  claim 1 , wherein the lower layer and upper layer are silicon layers. 
     
     
         3 . The method of  claim 1 , wherein the middle layer is a silicon oxide layer. 
     
     
         4 . The method of  claim 1 , wherein the stacked substrate is an SOI (silicon on insulator) substrate. 
     
     
         5 . The method of  claim 1 , wherein the forming of the first opening in the upper layer further comprises forming at least one second opening, and the etching of the lower layer is performed such that the outer periphery of the etched lower layer is located between the first opening and the second opening.