Method For Forming Silicon Film, Method For Forming PN Junction And PN Junction Formed Using The Same

Abstract

A method for forming a silicon film may be performed using a microheater including a substrate and a metal pattern spaced apart from the substrate. The silicon film may be formed on the metal pattern by applying a voltage to the metal pattern of the microheater to heat the metal pattern and by exposing the microheater to a source gas containing silicon. The silicon film may be made of polycrystalline silicon. A method for forming a pn junction may be performed using a microheater including a substrate, a conductive layer on the substrate, and a metal pattern spaced apart from the substrate. The pn junction may be formed between the metal pattern and the conductive layer by applying a voltage to the metal pattern of the microheater to heat the metal pattern. The pn junction may be made of polycrystalline silicon.

1 . A pn junction, comprising:
 a microheater including a substrate, a conductive layer on the substrate, and a metal pattern spaced apart from the substrate; and   a first doped layer and a second doped layer between the conductive layer and the metal pattern,   wherein at least one of the first doped layer and the second doped layer is grown on the metal pattern.   
     
     
         2 . The pn junction according to  claim 1 , further comprising:
 an intrinsic layer between the first doped layer and the second doped layer.   
     
     
         3 . The pn junction according to  claim 1 , wherein
 the first doped layer comprises a plurality of first doped layers spaced apart from each other, and   the second doped layer comprises at least one second doped layer positioned between the plurality of first doped layers.