US2013042963A1PendingUtilityA1

Heat-radiating substrate and method of manufacturing the same

Assignee: SAMSUNG ELECTRO MECHPriority: Jun 14, 2010Filed: Oct 18, 2012Published: Feb 21, 2013
Est. expiryJun 14, 2030(~3.9 yrs left)· nominal 20-yr term from priority
H05K 2201/062H05K 2201/10166H05K 2201/09745H05K 1/053H05K 1/141H05K 1/0203Y10T156/10Y10T29/49083Y10T156/1056Y10T29/49155Y10T29/49124Y10T156/1064
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Claims

Abstract

Disclosed herein are a heat-radiating substrate and a method of manufacturing the same. The heat-radiating substrate includes: a core layer including a core metal layer and a core insulating layer formed on the core metal layer and divided into a first region and a second region; a circuit layer formed in the first region of the core layer; a build-up layer formed in the second region of the core layer and including a build-up insulating layer and a build-up circuit layer; an adhesive layer formed between the second region of the core layer and the build-up layer; and an impregnation device mounted on the build-up layer to be impregnated into the adhesive layer. A heat generating element is mounted on the circuit layer and a thermally weakened element is mounted on the build-up layer, thereby preventing the thermally weakened element from being damaged by heat of the heat generating element. The impregnation device is formed on the build-up layer and is impregnated into the adhesive layer, thereby efficiently utilizing a space.

Claims

exact text as granted — not AI-modified
1 - 10 . (canceled) 
     
     
         11 . A method of manufacturing a heat-radiating substrate, comprising:
 (A) forming a circuit layer in a first region of a core layer including a core metal layer and a core insulating layer formed on the core metal layer and divided into the first region and a second region;   (B) preparing a build-up layer including a build-up insulating layer and a build-up circuit layer;   (C) mounting an impregnation device on the build-up layer; and   (D) bonding the second region of the core layer to the build-up layer by interposing an adhesive layer between the second region of the core layer and the build-up layer so that the impregnation device is impregnated into the adhesive layer.   
     
     
         12 . The method of manufacturing a heat-radiating substrate as set forth in  claim 11 , wherein at step (A), the core insulating layer is formed by anodizing the core metal layer. 
     
     
         13 . The method of manufacturing a heat-radiating substrate as set forth in  claim 11 , wherein step (A) includes:
 (A1) providing a core metal layer including aluminum;   (A2) preparing a core layer divided into a first region and a second region by forming a core insulating layer including alumina on the core metal layer by anodizing the core metal layer; and   (A3) forming a circuit layer in the first region of the core layer.   
     
     
         14 . The method of manufacturing a heat-radiating substrate as set forth in  claim 11 , further comprising (E) mounting a heat generating element on the circuit layer in the first region and mounting a thermally weakened element on the build-up layer in the second region. 
     
     
         15 . The method of manufacturing a heat-radiating substrate as set forth in  claim 14 , wherein the heat generating element is an insulated gate bipolar transistor (IGBT) or a diode, and the thermally weakened element is a driver IC. 
     
     
         16 . The method of manufacturing a heat-radiating substrate as set forth in  claim 11 , wherein the impregnation device is a passive device. 
     
     
         17 . The method of manufacturing a heat-radiating substrate as set forth in  claim 11 , wherein at step (D), the adhesive layer is made of prepreg (PPG). 
     
     
         18 . The method of manufacturing a heat-radiating substrate as set forth in  claim 11 , wherein step (A) includes:
 (A1) forming a through hole in the core metal layer;   (A2) preparing the core layer divided into the first region and the second region by forming the core insulating layer on the surface of the core metal layer including the inner walls of the through hole; and   (A3) forming the circuit layer electrically connected by the via in the first region of both surfaces of the core layer, simultaneously forming the via in the through hole.   
     
     
         19 . The method of manufacturing a heat-radiating substrate as set forth in  claim 11 , wherein step (A) includes:
 (A1) preparing the core layer including the core metal layer and the core insulating layer formed on the core metal layer and divided into the first region and the second region;   (A2) forming a seed layer on the core layer;   (A3) forming the patterned circuit layer on the seed layer formed in the first region of the core layer; and   (A4) removing the seed layer exposed to the outside.   
     
     
         20 . The method of manufacturing a heat-radiating substrate as set forth in  claim 11 , wherein step (A) includes:
 (A1) forming a cavity in the core metal layer;   (A2) preparing the core layer divided into the first region and the second region in which the cavity is formed by forming the core insulating layer on the core metal layer including the cavity; and   (A3) forming the circuit layer in the first region of the core layer.

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