Platen cleaning method

Abstract

A method for cleaning a workpiece support that includes using a workpiece that has been coated on its bottom surface with a suitable material is disclosed. This specially coated workpiece is placed on the support, and some time later, it is removed, taking with it particles from the support. In certain embodiments, the workpiece undergoes an ion implantation process to increase its temperature, and to increase the tackiness of the coating on the bottom surface. The material used to coat the bottom can be of variable types, including photoresists, oxides and deposited glasses.

1 . A method of removing particles from a surface of a workpiece support used to hold a workpiece comprising:
 coating a bottom surface of said workpiece with an oxide;   placing said bottom surface of said workpiece onto said workpiece support;   clamping said workpiece onto said workpiece support; and   removing said workpiece.   
     
     
         2 . The method of  claim 1 , wherein said workpiece comprises a semiconductor wafer. 
     
     
         3 . The method of  claim 1 , wherein said clamping is performed electrostatically. 
     
     
         4 . The method of  claim 1 , wherein said clamping is performed mechanically. 
     
     
         5 . The method of  claim 1 , further comprising heating said workpiece after said clamping. 
     
     
         6 . The method of  claim 5 , wherein said heating comprises using heat lamps. 
     
     
         7 . The method of  claim 5 , wherein said heating comprising implanting ions into said workpiece. 
     
     
         8 . The method of  claim 1 , wherein said workpiece is used as part of an ion implantation process. 
     
     
         9 . The method of  claim 8 , wherein said ion implantation process utilizes an ion beam. 
     
     
         10 . The method of  claim 8 , wherein said ion implantation process utilizes plasma immersion. 
     
     
         11 . The method of  claim 1 , wherein said workpiece is used as part of a process selected from the group consisting of plasma enhanced chemical vapor deposition, physical vapor deposition, lithography and etching. 
     
     
         12 . The method of  claim 1 , further comprising transferring particles from said workpiece support to said bottom surface of said workpiece prior to said removing.