Semiconductor device and method of manufacturing the same

Abstract

Disclosed herein is a semiconductor device, including: a first semiconductor region of a first conductivity type; a second semiconductor region having pairs of first pillar regions of the first conductivity type, and second pillar regions of a second conductivity type alternately provided; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the first conductivity type; and control electrodes each provided within a trench through an insulating film, a sidewall of the trench being formed so as to contact each of the third semiconductor region and the fourth semiconductor region.

1 .- 7 . (canceled) 
     
     
         8 . A method of manufacturing a semiconductor device, comprising:
 forming a second semiconductor region of a first conductivity type on a first semiconductor region of the first conductivity type;   forming first trenches having the same depth and the same shape in the same direction in said second semiconductor region, thereby forming first regions of the first conductivity type;   filling a semiconductor of a second conductivity type in each of said trenches through epitaxial growth, thereby forming second regions of the second conductivity type;   and   wherein   in the step of forming said first trenches and in the step of forming said second trenches, said control electrodes are arranged in a stripe pattern so as to intersect with said second pillar regions, and   a crystal plane orientation appearing in said sidewall of each of said second trenches becomes a crystal plane orientation which is higher in carrier mobility when an impurity is implanted than a crystal plane orientation appearing in said sidewall of each of said first trenches.   
     
     
         9 . The method of manufacturing a semiconductor device according to  claim 8 , further comprising: forming a third semiconductor region of the second conductivity type at a surface portion on a side of a second electrode of said second semiconductor region; and
 forming a fourth semiconductor region of the first conductivity type at a part of a surface of said third semiconductor region.   
     
     
         10 . The method of manufacturing a semiconductor device according to  claim 8 , further comprising: 
       forming second trenches having approximately a same depth and same shape in a common direction so that sidewalls of said second trenches contact each of said third semiconductor region and said fourth semiconductor region, forming an insulating film on said sidewall of each of said second trenches, and filling an electrode member in each of said second trenches, thereby forming control electrodes.