Schottky barrier diode

Abstract

A Schottky barrier diode includes a first metal layer, a second metal layer separated form the first metal layer, and a semiconductor layer. The semiconductor layer is in Schottky contact with the first metal layer and in ohmic contact with the second metal layer. The semiconductor layer includes an insulated polymer material and a number of carbon nanotubes dispersed in the insulated polymer material.

1 . A Schottky barrier diode, comprising:
 a first metal layer;   a second metal layer separated from the first metal layer; and   a semiconductor layer being in Schottky contact with the first metal layer and in ohmic contact with the second metal layer,   wherein the semiconductor layer comprises an insulated polymer material and a plurality of carbon nanotubes dispersed in the insulated polymer material.   
     
     
         2 . The Schottky barrier diode of  claim 1 , wherein the semiconductor layer is a P-type semiconductor, a first metal layer work function is smaller than a semiconductor layer work function, and a second metal layer work function is equal to or larger than the semiconductor layer work function. 
     
     
         3 . The Schottky barrier diode of  claim 1 , wherein the semiconductor layer is an N-type semiconductor, a first metal layer work function is greater than a semiconductor layer work function, and a second metal layer work function is equal to or less than the semiconductor layer work function. 
     
     
         4 . The Schottky barrier diode of  claim 1 , wherein a semiconductor layer work function is in a range from about 4.6 eV to about 4.9 eV. 
     
     
         5 . The Schottky barrier diode of  claim 1 , wherein a current carrier mobility of the semiconductor layer  14  is in a range from about 0.1 cm 2 /(V·s) to about 10 cm 2 /(V·s). 
     
     
         6 . The Schottky barrier diode of  claim 1 , wherein the insulated polymer material comprises a material that is selected from the group consisting of silicon gel, silicone rubber, hypoxia resin, epoxy resin, acrylic resin, and polyester. 
     
     
         7 . The Schottky barrier diode of  claim 1 , wherein the insulated polymer material is polydimethylsiloxane. 
     
     
         8 . The Schottky barrier diode of  claim 1 , wherein each of the plurality of carbon nanotubes is a semi-conductive carbon nanotube. 
     
     
         9 . The Schottky barrier diode of  claim 1 , wherein a weight percentage of the plurality of carbon nanotubes in the semiconductor layer is in a range from about 0.1% to about 1%. 
     
     
         10 . The Schottky barrier diode of  claim 9 , wherein a weight percentage of the plurality of carbon nanotubes in the semiconductor layer is about 0.35%. 
     
     
         11 . The Schottky barrier diode of  claim 10 , wherein a current carrier mobility of the semiconductor layer is about 1.98 cm 2 /(V·s). 
     
     
         12 . The Schottky barrier diode of  claim 1 , wherein the semiconductor layer is located between the first metal layer and the second metal layer 
     
     
         13 . The Schottky barrier diode of  claim 1 , further comprising an insulated substrate, wherein the first metal layer and the second metal layer are separately located on a surface of the insulated substrate, the semiconductor layer is located on the surface of the insulated substrate between the first metal layer and the second metal layer. 
     
     
         14 . The Schottky barrier diode of  claim 13 , wherein the semiconductor layer is at least partly located on the first metal layer and the second metal layer. 
     
     
         15 . The Schottky barrier diode of  claim 1 , wherein the first metal layer comprises copper, aluminum, or silver; and the second metal layer comprises gold, palladium, or platinum. 
     
     
         16 . The Schottky barrier diode of  claim 15 , wherein the first metal layer is copper, and the second metal layer is gold. 
     
     
         17 . A Schottky barrier diode, comprising:
 a first metal layer;   a second metal layer separated from the first metal layer; and   a semiconductor layer comprising an insulated polymer material and a plurality of carbon nanotubes dispersed in the insulated polymer material,   wherein one of the first metal layer and the second metal layer is in Schottky contact with the second metal layer, another one is in ohmic contact with the semiconductor layer.   
     
     
         18 . The Schottky barrier diode of  claim 17 , wherein the semiconductor layer is a P-type semiconductor, a first metal layer work function is smaller than a semiconductor layer work function, and a second metal layer work function is equal to or larger than the semiconductor layer work function. 
     
     
         19 . The Schottky barrier diode of  claim 17 , wherein the semiconductor layer is an N-type semiconductor, a first metal layer work function is larger than a semiconductor layer work function, and a second metal layer work function is equal to or smaller than the semiconductor layer work function. 
     
     
         20 . The Schottky barrier diode of  claim 17 , wherein a weight percentage of the plurality of carbon nanotubes in the semiconductor layer is in a range from about 0.1% to about 1%.