Sputter-etch tool and liners

Abstract

This disclosure provides systems, methods and apparatus for fabricating electromechanical system devices within a plasma-etch reaction chamber. In one aspect, a plasma-etch system includes a plasma-etch reaction chamber, an inlet in fluid communication with the reaction chamber, a cathode positioned within the reaction chamber and a non-hollow anode positioned within the reaction chamber between the inlet and the cathode. The inlet is configured to introduce a process gas into the reaction chamber such that at least a portion of the process gas strikes an upper surface of the anode and is allowed to flow across the upper surface and around the edges of the anode. The anode can be a liner plate in place of a showerhead.

1 . A plasma-etch system, comprising:
 a plasma-etch reaction chamber;   an inlet configured to be in fluid communication with the reaction chamber;   a cathode including a substrate support positioned within the reaction chamber; and   a non-hollow anode positioned within the reaction chamber between the inlet and the cathode, wherein the inlet is configured to introduce a process gas into the reaction chamber such that at least a portion of the process gas is allowed to flow across an upper surface of the anode and around edges of the anode.   
     
     
         2 . The plasma-etch system of  claim 1 , wherein the plasma-etch reaction chamber includes a sputter-etch reaction chamber. 
     
     
         3 . The plasma-etch system of  claim 1 , wherein the anode includes a liner plate. 
     
     
         4 . The plasma-etch system of  claim 1 , wherein the anode includes an exposed metal without an anodized coating. 
     
     
         5 . The plasma-etch system of  claim 1 , wherein the anode is substantially unperforated through its thickness. 
     
     
         6 . The plasma-etch system of  claim 1 , wherein the anode includes one or more holes extending through its thickness. 
     
     
         7 . The plasma-etch system of  claim 1 , wherein the inlet defines one or more openings positioned above the upper surface of the anode and is configured to allow the at least a portion of the process gas to flow from the inlet and across the upper surface of the anode. 
     
     
         8 . The plasma-etch system of  claim 7 , wherein the one or more openings are spaced apart from the upper surface of the anode to define a vertical gap between the upper surface of the anode and the inlet. 
     
     
         9 . The plasma-etch system of  claim 8 , wherein the one or more openings are aligned with respect to the upper surface of the anode such that the at least a portion of the process gas strikes the upper surface. 
     
     
         10 . The plasma-etch system of  claim 8 , further including a plurality of spacers between the inlet and the upper surface of the anode, wherein a horizontal gap extends between each two adjacent spacers in the plurality of spacers, to allow the at least a portion of the process gas to flow from the inlet, through the vertical and horizontal gap, and across the upper surface of the anode. 
     
     
         11 . The plasma-etch system of  claim 1 , further including a control system. 
     
     
         12 . The plasma-etch system of  claim 11 , wherein the control system further includes a processor. 
     
     
         13 . The plasma-etch system of  claim 11 , wherein the control system is communicatively coupled to a network. 
     
     
         14 . A plasma-etch system, comprising:
 a chamber for a plasma-etch reaction;   a cathode means for conducting electric charges;   an anode means for conducting electric charges; and   fluid communication means for providing fluid into the chamber and guiding at least some of the fluid across an upper surface of the anode means, around outer edges of the anode means and into a plasma reaction zone between the anode means and the cathode means.   
     
     
         15 . The plasma-etch system of  claim 14 , wherein the chamber includes a sputter-etch reaction chamber. 
     
     
         16 . The plasma-etch system of  claim 14 , wherein the fluid communication means includes a gas inlet and the anode means includes a non-hollow plate positioned between the gas inlet and the cathode means. 
     
     
         17 . The plasma-etch system of  claim 14 , wherein the anode means includes an exposed metal without an anodized coating. 
     
     
         18 . The plasma-etch system of  claim 14 , wherein the anode means includes a substantially unperforated plate. 
     
     
         19 . The plasma-etch system of  claim 14 , wherein the anode means includes a plate defining a plurality of holes extending through a thickness of the plate such that gas can flow therethrough. 
     
     
         20 . A method of plasma-etching a substrate, comprising:
 providing a plasma-etch reaction chamber, an inlet configured to be in fluid communication with the reaction chamber, a cathode configured to support a substrate, and an anode within the reaction chamber between the inlet and the cathode, wherein the cathode is configured to be negatively biased with respect to the anode;   introducing a process gas into the reaction chamber such that at least a portion of the process gas strikes an upper surface of the anode and flows across the upper surface and around the edges of the anode; and   igniting a plasma between the anode and the cathode.   
     
     
         21 . The method of  claim 20 , further including etching material from at least a portion of a substrate supported by the cathode. 
     
     
         22 . The method of  claim 21 , wherein etching includes sputter-etching. 
     
     
         23 . The method of  claim 20 , wherein introducing further includes flowing a portion of the process gas through one or more holes extending through a thickness of the liner plate. 
     
     
         24 . The method of  claim 20 , wherein introducing includes introducing argon into the reaction chamber.