Dry-etching method

Abstract

A process including a main etching step under a first pressure using a gas containing at least HBr as an etching gas. The main etching is ended before a silicon oxide film is exposed. An over-etching process is effected under a second pressure higher than the first pressure using a gas containing at least HBr so as to completely expose the silicon oxide film. In such a way, the selectivity of a silicon-containing conductive layer with respect to the silicon oxide film is improved. Without etching the silicon oxide film layer, which is an underlying layer, and without marring the shape of the silicon-containing conductive film layer formed by etching, only the desired silicon-containing conductive film layer is removed by etching reliably.

1 - 12 . (canceled) 
     
     
         13 . A plasma processing apparatus comprising:
 a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;   a lower electrode provided in the vacuum chamber and configured to mount the substrate thereon;   an upper electrode provided in the vacuum chamber to face the lower electrode;   a first high frequency power supply configured to supply a first high frequency power to the upper electrode;   a second high frequency power supply configured to supply a second high frequency power to the lower electrode; and   a DC power supply configured to supply a DC voltage to the upper electrode;   wherein the first and the second high frequency power supply are respectively configured to start supplying the first and the second high frequency power to the upper and the lower electrode after supplying the DC voltage from the DC power supply to the upper electrode is started.   
     
     
         14 . The plasma processing apparatus of  claim 13 , wherein the second high frequency power supply is configured to start said supplying the second high frequency power after said supplying the first high frequency power is started. 
     
     
         15 . The plasma processing apparatus of  claim 13 , further comprising another DC power supply configured to supply another DC voltage to the upper electrode,
 wherein the lower electrode includes an electrostatic chuck configured to electrostatically adhere the substrate thereto, and   wherein said another DC power supply is configured to supply said another DC voltage to the electrostatic chuck after said supplying the first high frequency power and the second high frequency power are started.   
     
     
         16 . The plasma processing apparatus of  claim 14 , further comprising another DC power supply configured to supply another DC voltage to the upper electrode,
 wherein the lower electrode includes an electrostatic chuck configured to electrostatically adhere the substrate thereto, and   wherein said another DC power supply is configured to supply said another DC voltage to the electrostatic chuck after said supplying the first high frequency power and the second high frequency power are started.   
     
     
         17 . A plasma processing apparatus comprising:
 a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;   an electrode provided in the vacuum chamber;   a first high frequency power supply configured to supply a first high frequency power to the upper electrode; and   a DC power supply configured to supply a DC voltage to the electrode,   wherein the first high frequency power supply is configured to start supplying the first high frequency power to the electrode after the DC voltage from the DC power supply is supplied to the electrode.   
     
     
         18 . The plasma processing apparatus of  claim 16 , wherein the electrode is an upper electrode provided in an upper portion of the vacuum chamber. 
     
     
         19 . A plasma processing apparatus comprising:
 a vacuum chamber for accommodating a substrate to be processed therein to perform a plasma processing thereon;   a lower electrode, provided in the vacuum chamber and configured to mount the substrate thereon;   an upper electrode provided in the vacuum chamber to face the lower electrode;   a first high frequency power supply configured to supply a first high frequency power to the upper electrode;   a second high frequency power supply configured to supply a second high frequency power to the lower electrode; and   a DC power supply configured to supply a DC voltage to the upper electrode;   wherein the first and the second high frequency power supply are respectively configured to start supplying the first and the second high frequency power to the upper and the lower electrode after supplying the DC voltage from the DC power supply to the upper electrode is started, thereby reliably igniting a plasma in the vacuum chamber.