US2013022790A1PendingUtilityA1

Manufacturing method of mems device, and substrate used therefor

Assignee: FUJITSU LTDPriority: Mar 12, 2010Filed: Sep 11, 2012Published: Jan 24, 2013
Est. expiryMar 12, 2030(~3.6 yrs left)· nominal 20-yr term from priority
Y10T428/24562Y10T428/24521H01H 59/0009
50
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Claims

Abstract

A method for manufacturing a MEMS device, includes: preparing a substrate provided with a first substrate in which a cavity is formed, and a second substrate that is bonded to a side of the first substrate and includes a slit to delimit a movable portion in a position corresponding to the cavity, the second substrate, including a first surface thereof facing the first substrate, being provided with a thermally-oxidized film selectively formed on the first surface in a position corresponding to the movable portion; forming a first electrode layer on a second surface opposite to the first surface; forming a sacrifice lager on the first electrode layer and the second substrate; forming a second electrode layer on the sacrifice layer; and removing the sacrifice layer and the thermally-oxidized film after the second electrode layer is formed.

Claims

exact text as granted — not AI-modified
1 - 4 . (canceled) 
     
     
         5 . A substrate used to manufacture a MEMS device, comprising:
 a first substrate;   a second substrate; and   an insulating layer provided between the first substrate and the second substrate,   wherein the first substrate is provided with a cavity extending to a surface of the first substrate on a side of the insulating layer, and   the second substrate is provided with a thermally-oxidized film formed selectively in a position corresponding to the cavity.

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