Semiconductor light-emitting device having stacked transparent electrodes

Abstract

This application is related to a semiconductor light-emitting device including a substrate, a semiconductor epitaxial layer over the substrate and having a first surface distant from the substrate, a first transparent conductive layer formed on the first surface, and a second transparent conductive layer formed on the first transparent conductive layer and having a second surface smaller than a first surface of the first transparent conductive layer.

1 . A semiconductor light-emitting device, comprising:
 a semiconductor layer;   a first connection arranged on the semiconductor layer;   a second connection arranged on the semiconductor layer; and   a first current-spreading segment and a second current-spreading segment,   respectively, being directed from the first connection to the second connection and comprising a transparent oxide.   
     
     
         2 . The semiconductor light-emitting device of  claim 1 , further comprising an extension segment directed from the second connection to the first connection. 
     
     
         3 . The semiconductor light-emitting device of  claim 1 , wherein at least one of the first current-spreading segment and the second current-spreading segment comprises a straight line, a curve, or a combination thereof. 
     
     
         4 . The semiconductor light-emitting device of  claim 1 , wherein the first current-spreading segment is separated from the second current-spreading segment by a distance of 1 μm˜500 μm. 
     
     
         5 . The semiconductor light-emitting device of  claim 1 , wherein the first current-spreading segment and the second current-spreading segment are arranged in a U-shape. 
     
     
         6 . A semiconductor light-emitting device, comprising:
 a semiconductor layer having a first side, a second side, and a boundary;   a connection arranged on the first side;   an electrode arranged on the second side;   a surrounding segment arranged on the first side; and   a cross segment connected to the connection and directed to the boundary;   wherein at least one of the surrounding segment and the cross segment comprises a transparent oxide.   
     
     
         7 . The semiconductor light-emitting device of  claim 6 , wherein the cross segment is extended from the connection and intersects with the surrounding segment. 
     
     
         8 . The semiconductor light-emitting device of  claim 6 , wherein the surrounding segment and the cross segment are not physically connected with each other. 
     
     
         9 . The semiconductor light-emitting device of  claim 6 , wherein the surrounding segment surrounds the connection. 
     
     
         10 . The semiconductor light-emitting device of  claim 6 , wherein the surrounding segment is arranged in a radial symmetry or bilateral symmetry with respect to the connection.