Electrode structure for use in electronic device and method of making same

Abstract

An electrode structure is provided for use in an electronic device. In certain example embodiments, an electrode structure includes a supporting glass substrate (e.g., soda-lime silica based float glass), a buffer layer (e.g., Si x N y ), and a conductive electrode (e.g., Mo) provided in this order. The buffer layer is advantageous in that it prevents or reduces sodium (Na) migration from the glass substrate into semiconductor layer(s) of the electronic device.

1 - 21 . (canceled) 
     
     
         22 . A photovoltaic device comprising:
 a glass substrate comprising SiO 2  and Na 2 O;   a buffer layer comprising a silicon-inclusive dielectric material on the glass substrate;   a conductive electrode comprising Mo, wherein the buffer layer is located between at least the glass substrate and the conductive electrode comprising Mo;   a semiconductor film comprising copper indium diselenide and/or copper indium gallium diselenide, wherein the conductive electrode comprising Mo is located between at least the semiconductor film and the buffer layer; and   a transition layer comprising MoSe 2-x O x  located between the conducive electrode comprising Mo and the semiconductor film, wherein x is from about 0.1 to 1.9.   
     
     
         23 . The device of  claim 22 , wherein the buffer layer comprises silicon nitride. 
     
     
         24 . The device of  claim 22 , wherein the buffer layer comprises Si x N y , where x/y is at least 0.76. 
     
     
         25 . The device of  claim 24 , wherein the buffer layer comprises Si x N y , where x/y is at least 0.80. 
     
     
         26 . The device of  claim 22 , where the buffer layer further comprises silicon, oxygen and aluminum. 
     
     
         27 . The device of  claim 22 , wherein the semiconductor layer further comprises from about 0.05 to 2% sodium. 
     
     
         28 . The device of  claim 22 , wherein the glass substrate is a rear glass substrate of the photovoltaic device, and wherein the photovoltaic device further includes a front glass substrate and a front electrode. 
     
     
         29 . A photovoltaic device comprising:
 a glass substrate comprising SiO 2  and Na 2 O;   a conductive electrode comprising Mo;   a semiconductor film comprising copper indium diselenide and/or copper indium gallium diselenide, wherein the conductive electrode comprising Mo is located between at least the semiconductor film and the glass substrate; and   a transition layer comprising MoSe 2-x O x  located between the conducive electrode comprising Mo and the semiconductor film, wherein x is from about 0.1 to 1.9.   
     
     
         30 . The device of  claim 29 , wherein the semiconductor layer further comprises from about 0.05 to 2% sodium. 
     
     
         31 . The device of  claim 29 , wherein the glass substrate is a rear glass substrate of the photovoltaic device, and wherein the photovoltaic device further includes a front glass substrate and a front electrode.