Photoelectric conversion device and method of producing the same

Abstract

A photoelectric conversion device which can improve photoelectric conversion efficiency is provided. The photoelectric conversion device has at least one p-i-n type photoelectric conversion part which includes a first conductivity type layer, a first i-type layer, a second i-type layer and a second conductivity type layer stacked in this order, and it is characterized in that a crystallization ratio of the first i-type layer is lower than that of the second i-type layer and a change rate of a crystallization ratio in a film-thickness direction at an interface between the first i-type layer and the second i-type layer is 0.013 to 0.24 nm −1 .

1 . A method of producing a photoelectric conversion device, comprising the step of forming at least one photoelectric conversion part including a first conductivity type semiconductor layer, a first i-type semiconductor layer, a second i-type semiconductor layer and a second conductivity type semiconductor layer on a substrate, in which at least one main surface of the substrate has electrical conductivity, by a plasma CVD method,
 wherein the second i-type semiconductor layer is formed from a mixed gas of a silicon-containing gas and a hydrogen gas as process gases, and   the second i-type layer is formed by a method including the step of reducing continuously a flow ratio of hydrogen to silicon, which is defined by (hydrogen gas flow rate)/(silicon-containing gas flow rate), with plasma remaining on at an initial stage of forming the layer.   
     
     
         2 . The method according to  claim 1 , wherein the first i-type semiconductor layer is formed from a mixed gas of a silicon-containing gas and a hydrogen gas as process gases, and
 a value of a flow ratio of hydrogen to silicon of the second i-type semiconductor layer when a reduction in the flow ratio of hydrogen to silicon is initiated is larger than a flow ratio of hydrogen to silicon when forming the first i-type semiconductor layer.   
     
     
         3 . The method according to  claim 1 , further comprising the step of forming a third i-type semiconductor layer on the second i-type semiconductor layer on a side of the second conductivity type semiconductor layer. 
     
     
         4 . The method according to  claim 1 , wherein the first conductivity type semiconductor layer is a p-type and the second conductivity type semiconductor layer is an n-type.