Semiconductor device and production method for same

Abstract

A semiconductor device of the present invention comprises: an outer package; a first lead frame including a first relay lead, a first die pad with a power element mounted thereon, and a first external connection lead which has an end protruding from the outer package; and a second lead frame including a second relay lead, a second die pad with a control element mounted thereon, and a second external connection lead which has an end protruding from the outer package, wherein the first die pad and the second die pad or the first external connection lead and the second relay lead are joined to each other at a joint portion, and an end of the second relay lead extending from a joint portion with the first relay lead is located inside the outer package.

1 . A semiconductor device comprising:
 a resin outer package;   a first lead frame including first relay leads, a first die pad with a first semiconductor chip mounted thereon, and first external connection leads which each have an end protruding from the outer package; and   a second lead frame including second relay leads, a second die pad with a second semiconductor mounted thereon, and second external connection leads which each have an end protruding from the outer package, wherein   the outer package seals the first semiconductor chip and the second semiconductor chip,   the first die pad and the second die pad or the first external connection lead and the second relay lead are joined to each other at a joint portion, and   at least one of an end of the second relay lead extending from a joint portion with the first relay lead and an end of a suspended lead of the second die pad is located inside the outer package.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first relay lead, the first semiconductor chip, and the first external connection lead are electrically connected, and the second relay lead, the second semiconductor chip, and the second external connection lead are electrically connected. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the first lead frame and the second lead frame are stacked. 
     
     
         4 . The semiconductor device according to  claim 1 , wherein at least a portion of the first semiconductor chip and at least a portion of the second semiconductor chip are disposed so as to overlap each other in a plan view. 
     
     
         5 . The semiconductor device according to  claim 1 , wherein the first relay lead of the first lead frame and the second relay lead of the second lead frame are joined to each other with caulking 
     
     
         6 . The semiconductor device according to  claim 1 , wherein the first relay lead of the first lead frame and the second relay lead of the second lead frame are joined to each other with surface joining 
     
     
         7 . The semiconductor device according to  claim 1 , wherein the first relay leads and the first die pad of the first lead frame are coupled to a heat dissipation plate which is partly exposed from a surface of the outer package. 
     
     
         8 . A method for manufacturing a semiconductor device, comprising:
 preparing a first lead frame including first relay leads, a first die pad with a first semiconductor chip mounted thereon, and first external connection leads, and a second lead frame including second relay leads, a second die pad with a second semiconductor chip mounted thereon, and second external connection leads;   joining the first die pad and the second die pad or the first relay lead and the second relay lead;   cutting off the second relay lead of the second lead frame extending from a joint portion with the first relay lead or a suspended lead of the second die pad inside an area where a semiconductor package is to be molded as a resin outer package; and   molding with resin an end of the cut-off second lead frame or an end of the cut-off suspended lead disposed inside molds to form the outer package.   
     
     
         9 . The method for manufacturing a semiconductor device according to  claim 8 , wherein at least a portion of the first semiconductor chip and at least a portion of the second semiconductor chip are disposed so as to overlap each other in a plan view. 
     
     
         10 . The method for manufacturing a semiconductor device according to  claim 8 , wherein the first relay lead of the first lead frame and the second relay lead of the second lead frame are joined to each other with caulking 
     
     
         11 . The method for manufacturing a semiconductor device according to  claim 8 , wherein the first relay lead of the first lead frame and the second relay lead of the second lead frame are joined to each other with surface joining 
     
     
         12 . The method for manufacturing a semiconductor device according to  claim 8 , wherein the first relay lead and the first die pad of the first lead frame are coupled to a heat dissipation plate after cutting off either the second relay lead or the suspended lead. 
     
     
         13 . The method for manufacturing a semiconductor device according to  claim 8 , wherein the first relay lead and the first die pad of the first lead frame are coupled to the heat dissipation plate before joining the first die pad and the second die pad or the first relay lead and the second relay lead.