Opto-electronic and electronic devices using an n-face or m-plane gallium nitride substrate prepared via ammonothermal growth

Abstract

A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN.

1 . A method for fabricating an opto-electronic or electronic device, comprising:
 ammonothermally growing a Group-III nitride substrate from a Group-III nitride seed, wherein the Group-III nitride substrate is a bulk substrate; and   growing one or more Group-III nitride layers on or above an N-polar surface of the Group-III nitride substrate, wherein the N-polar surface has an off-axis angle less than 10 degrees and the N-polar surface, as grown, is smoother than a surface, as grown, of the Group-III nitride substrate that is Group-III-polar.   
     
     
         2 . The method of  claim 1 , wherein the Group-III nitride layers are grown under a pressure less than 760 Torr. 
     
     
         3 . The method of  claim 1 , wherein at least one of the Group-III nitride layers is an Mg-doped layer having an Mg concentration that is more than about 10 21  cm −3 . 
     
     
         4 . The method of  claim 3 , wherein the Mg-doped layer has a thickness that is more than about 0.1 micron. 
     
     
         5 . The method of  claim 1 , wherein the Group-III nitride layers include an AlGaN layer and a GaN layer, and electrons are induced at an interface between the AlGaN layer and the GaN layer in the GaN layer side of the interface. 
     
     
         6 . The method of  claim 1 , wherein the Group-III nitride substrate is a GaN substrate and the Group-III nitride layers include one or more n-type Group-III nitride layers on or above the N-polar surface of the GaN substrate, one or more Group-III nitride light-emitting active layers on or above the n-type Group-III nitride layers, and one or more p-type Group-III nitride layers on or above the active layers and having an Mg doping level more than above 10 21  cm −3 . 
     
     
         7 . An opto-electronic or electronic device fabricated using the method of  claim 1 . 
     
     
         8 . A method of fabricating an opto-electronic or electronic device comprising:
 ammonothermally growing a Group-III nitride substrate from a Group-III nitride seed, wherein the Group-III nitride substrate-is a bulk substrate; and   growing one or more Group-III nitride layers on or above a surface of the Group-III nitride substrate that is not a C-plane (0001) surface, wherein the surface of the Group-III nitride substrate that is not the C-plane (0001) surface, as grown, is smoother than the C-plane (0001) surface, as grown, of the Group-III nitride substrate.   
     
     
         9 . The method of  claim 8 , wherein the surface of the Group-III nitride substrate that is not the C-plane (0001) surface is an M-plane {10-10} surface. 
     
     
         10 . The method of  claim 8 , wherein the surface of the Group-III nitride substrate that is not the C-plane (0001) surface is an A-plane {11-20} surface. 
     
     
         11 . The method of  claim 8 , wherein the surface of the Group-III nitride substrate that is not the C-plane (0001) surface is a {10-11} surface. 
     
     
         12 . The method of  claim 8 , wherein the surface of the Group-III nitride substrate that is not the C-plane (0001) surface is a {10-1-1} surface. 
     
     
         13 . The method of  claim 8 , wherein the surface of the Group-III nitride substrate that is not the C-plane (0001) surface is a {11-22} surface. 
     
     
         14 . The method of  claim 8 , wherein the surface of the Group-III nitride substrate that is not the C-plane (0001) surface is a {11-2-2} surface. 
     
     
         15 . The method of  claim 8 , wherein the surface of the Group-III nitride substrate that is not the C-plane (0001) surface is an N-polar surface. 
     
     
         16 . An opto-electronic or electronic device fabricated using the method of  claim 8 .