Pentacene-carbon nanotube composite, method of forming the composite, and semiconductor device including the composite

Abstract

A method of forming a carbon nanotube-pentacene composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, and heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.

1 . A method of forming a carbon nanotube-pentacene composite layer, comprising:
 depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes;   heating the dispersion to remove solvent from the dispersion; and   heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.   
     
     
         2 . The method of  claim 1 , wherein the heating of the dispersion comprises heating at a temperature in a range from 50° C. to 100° C. 
     
     
         3 . The method of  claim 1 , wherein the heating of the substrate comprises heating the substrate under nitrogen from 100° C. to 200° C. 
     
     
         4 . The method of  claim 1 , further comprising:
 obtaining the soluble pentacene precursor from a Diels-Alder reaction of pentacene with an N-sulfinylamide.   
     
     
         5 . The method of  claim 1 , further comprising:
 forming the dispersion of soluble pentacene precursor and carbon nanotubes.   
     
     
         6 . The method of  claim 5 , wherein the forming of the dispersion comprises mixing purified carbon nanotubes in an organic solvent. 
     
     
         7 . The method of  claim 6 , wherein the forming of the dispersion further comprises sonicating and centrifuging the mixture to remove un-coordinated carbon nanotubes as sediments. 
     
     
         8 . The method of  claim 7 , wherein the stable dispersion comprises a supernatant liquid generated from the sonicating and centrifuging of the mixture. 
     
     
         9 . The method of  claim 1 , wherein the depositing of the stable dispersion comprises one of spin coating and drop casting the stable dispersion on the substrate. 
     
     
         10 . The method of  claim 1 , wherein the pentacene precursor comprises pentacene-N-sulfinylacetamide. 
     
     
         11 . The method of  claim 1 , further comprising:
 forming source, drain and gate electrodes on the substrate, the dispersion being deposited between the source and drain electrodes.   
     
     
         12 . The method of  claim 1 , further comprising:
 forming an insulating layer on the substrate, the dispersion being deposited on the insulating layer.   
     
     
         13 . A field effect transistor comprising:
 source, drain and gate electrodes formed on a substrate; and   a channel region formed on the substrate, the channel region comprising a carbon nanotube-pentacene composite layer.   
     
     
         14 . The field effect transistor of  claim 13 , wherein the carbon nanotube-pentacene composite layer comprises plural pentacene molecules are bonded to a carbon nanotube by π-π it bonding and electrostatic bonding. 
     
     
         15 . A method of forming a field effect transistor, comprising:
 forming source, drain and gate electrodes on a substrate; and   forming a channel region on the substrate, the channel region comprising a carbon nanotube-pentacene composite layer.   
     
     
         16 . The method of  claim 15 , wherein the forming of the channel region comprises:
 depositing on the substrate a stable dispersion of a soluble pentacene precursor and carbon nanotubes;   heating the dispersion to remove solvent from the dispersion; and   heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer.