Nitride-based semiconductor device and method for fabricating the same

Abstract

A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12 ; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10 ; and an electrode 30 provided on the semiconductor multilayer structure 20 . The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32 . The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.

1 . A nitride-based semiconductor device, comprising:
 a nitride-based semiconductor multilayer structure including a p-type GaN based semiconductor region, a surface of the p-type GaN based semiconductor region being an m-plane; and   an electrode that is arranged on the p-type GaN based semiconductor region,   
       wherein the p-type GaN based semiconductor region is made of an Al x In y Ga z N semiconductor (where x+y+z=1, x≧0, y≧0, and z>0), and
 the electrode includes a Mg layer which is in contact with the surface of the p-type GaN based semiconductor region and a Ag layer which is provided on the Mg layer. 
 
     
     
         2 . The nitride-based semiconductor device of  claim 1 , wherein a contact resistance of the electrode arranged on the m-plane is less than 1.0×10 −02  Ωcm 2 . 
     
     
         3 . The nitride-based semiconductor device of  claim 1 , wherein the Ag layer is covered with a protector electrode which is made of a metal different from Ag. 
     
     
         4 . The nitride-based semiconductor device of  claim 1 , wherein the Ag layer is covered with a protector layer which is made of a dielectric. 
     
     
         5 . The nitride-based semiconductor device of  claim 1 , wherein the semiconductor multilayer structure includes an active layer which includes an Al a In b Ga c N layer (where a+b+c=1, a≧0, b≧0 and c≧0), the active layer being configured to emit light. 
     
     
         6 . The nitride-based semiconductor device of  claim 1 , wherein a thickness of the Mg layer is equal to or smaller than a thickness of the Ag layer. 
     
     
         7 . The nitride-based semiconductor device of  claim 1 , wherein, in the Mg layer, a concentration of N is lower than a concentration of Ga. 
     
     
         8 . The nitride-based semiconductor device of  claim 1 , further comprising a semiconductor substrate that supports the semi-conductor multilayer structure. 
     
     
         9 . The nitride-based semiconductor device of  claim 1 , wherein the p-type GaN-based semiconductor region is made of GaN. 
     
     
         10 . The nitride-based semiconductor device of  claim 1 , wherein the electrode further includes an alloy interposed between the Mg layer and the Ag layer. 
     
     
         11 . The nitride-based semiconductor device of  claim 1 , wherein the Mg layer includes Mg islands provided on the surface of the p-type GaN-based semiconductor region. 
     
     
         12 . The nitride-based semiconductor device of  claim 1 , wherein the Mg layer is made of a Mg—Ag alloy. 
     
     
         13 . A light source, comprising:
 the nitride-based semiconductor device according to  claim 1 ; and   a wavelength converter including a phosphor that converts a wavelength of light emitted from the nitride-based semiconductor device.   
     
     
         14 . The nitride-based semiconductor device of  claim 1 , wherein the Ag layer is provided directly on the Mg layer.