Apparatus to conduct spin-on film processing

Abstract

An apparatus and process operate to impose acoustic radiation pressure upon a spin-on mass to alter topography of the spin-on mass. Other apparatus and processes are disclosed.

1 . An apparatus comprising:
 a spinner on which to place a wafer;   a source operable to alter topography of a spin-on mass when the spin-on mass is on the wafer, the source being an acoustic radiation pressure broadcast source;   a mounting substrate to which the source is mounted, the mounting substrate moveable in an oscillatory motion.   
     
     
         2 . The process of  claim 1 , wherein the oscillatory motion is coordinated with a diameter of the source. 
     
     
         3 . The process of  claim 1 , wherein the oscillatory motion includes lateral oscillatory motion. 
     
     
         4 . The process of  claim 1 , wherein the oscillatory motion includes vertical oscillatory motion. 
     
     
         5 . The process of  claim 1 , wherein the apparatus includes an applicator to dispense the spin-on mass onto the wafer, the applicator having a transducer in which an acoustic radiation pressure broadcast source is disposed. 
     
     
         6 . An apparatus comprising:
 a spinner on which to place a wafer;   an array of sources operable to alter topography of a spin-on mass when the spin-on mass is on the wafer, the sources being acoustic radiation pressure broadcast sources;   a mounting substrate to which the sources are mounted, the mounting substrate moveable in an oscillatory motion.   
     
     
         7 . The apparatus of  claim 6 , wherein the oscillatory motion includes eccentric oscillatory motion. 
     
     
         8 . The apparatus of  claim 6 , wherein the sources are individually selectable for activation. 
     
     
         9 . The apparatus of  claim 6 , wherein one or more of the sources are controllable to emanate acoustic radiation at frequencies less than about 900 kHz. 
     
     
         10 . The apparatus of  claim 6 , wherein one or more of the sources are controllable to emanate acoustic radiation at frequencies in the range from about 900 kHz to about 2 MHz. 
     
     
         11 . The apparatus of  claim 6 , wherein one or more of the sources are controllable to emanate modulated acoustic radiation. 
     
     
         12 . The apparatus of  claim 11 , wherein the modulated acoustic radiation includes amplitude modulation, frequency modulation, or both amplitude modulation and frequency modulation. 
     
     
         13 . The apparatus of  claim 6 , wherein the oscillatory motion has an oscillatory radius set in accordance with a characteristic length of a source of the array of sources. 
     
     
         14 . The apparatus of  claim 13 , wherein the oscillator radius is set less than or equal to a characteristic diameter of the source. 
     
     
         15 . The apparatus of  claim 6 , wherein the array has a substantially circular form factor with a diameter to approximate a size of a selected wafer to be processed. 
     
     
         16 . The apparatus of  claim 6 , wherein the apparatus includes a plurality of applicators structured to dispense material of the spin-on mass onto the wafer, each applicator having a transducer in which an acoustic radiation pressure broadcast source is disposed. 
     
     
         17 . An apparatus comprising:
 a spinner on which to place a wafer to be processed;   a first array of sources operable to alter topography of a spin-on mass when the spin-on mass is on the wafer, the sources being acoustic radiation pressure broadcast sources, the first array operably disposed above the wafer to be processed;   a first mounting substrate to which the first array is mounted, the first mounting substrate moveable in an oscillatory motion;   a second array of sources operable to alter topography of a spin-on mass when the spin-on mass is on the wafer, the sources being acoustic radiation pressure broadcast sources, the second array operably disposed below the wafer to be processed;   a second mounting substrate to which the second array is mounted.   
     
     
         18 . The apparatus of  claim 17 , wherein the apparatus is structured such that the first array is operably spaced apart, and above the spin-on mass by a spacing distance, the spacing distance related to a diameter of one of the sources of the first array. 
     
     
         19 . The apparatus of  claim 17 , wherein the first array and the second array are individually selectable for activation to process the wafer. 
     
     
         20 . The apparatus of  claim 17 , wherein an applicator is disposed among the sources of the first array, the applicator structured to dispense the spin-on mass onto the wafer, the applicator having a transducer in which a acoustic radiation pressure broadcast source is disposed.