Integration cmos compatible of micro/nano optical gain materials

Abstract

A method is provided for the integration of an optical gain material into a Complementary metal oxide semiconductor device, the method comprising the steps of: configuring a workpiece from a silicon wafer upon which is disposed an InP wafer bearing an epitaxy layer; mechanically removing the InP substrate; etching the InP remaining on epitaxy layer with hydrochloric acid; depositing at least one Oxide pad on revealed the epitaxy layer; using the Oxide pad as a mask during a first pattern etch removing the epitaxy to an N level; etching with a patterned inductively coupled plasma (ICP) technique; isolating the device on the substrate with additional pattern etching patterning contacts, applying the contacts.

1 . An optical gain material, the material comprising:
 an InGaAlAs layer;   an InGaAsP layer disposed proximally to said InGaAlAs layer.   
     
     
         2 . An integrated gain device, said device comprising;
 an InGaAlAs/InGaAsP epitaxy layer;   a silicon substrate upon which said InGaAlAs/InGaAsP is disposed;