Image sensing device and image sensing system

Abstract

An image sensing device comprises: a pixel array that is arrayed such that pixels that output signals to column signal lines constitute a plurality of rows and a plurality of columns, and in which the plurality of pixels are connected to each of the plurality of column signal lines; a plurality of readout units that read out signals from the pixel array via the plurality of column signal lines, each of the plurality of readout units including an input transistor that receives a signal that has been read out via the column signal line; and a first load transistor that supplies an electric current to the input transistor, and a plurality of first bias supply units that supply mutually different bias voltages to gates of the first load transistors at least in readout units of the plurality of readout units and arranged adjacent to each other.

1 .- 6 . (canceled) 
     
     
         7 . An image sensing device comprising:
 a pixel array having a plurality of pixels which form rows and columns, wherein each pixel is connected to one of a plurality of column signal lines;   a plurality of load transistors, each connected to one of the plurality of column signal lines;   a readout circuit that reads out signals from the pixel array, via column signal lines, of the plurality of column signal lines, to which one of the plurality of load transistors is connected; and   a plurality of bias supply units, wherein load transistors, of the plurality of load transistors, which are arranged adjacent to each other, are biased by different bias supply units of the plurality of bias supply units.   
     
     
         8 . The image sensing device according to  claim 7 , wherein the load transistors and the bias supply units that are mutually connected form current mirror circuits. 
     
     
         9 . The image sensing device according to  claim 7 ,
 wherein the readout circuit is arranged at a first side of the pixel array so as to read out signals from pixels of a part of the plurality of column signal lines, and   wherein the device further comprises:   a plurality of second load transistors, each connected to one of the plurality of column signal lines, to which none of the plurality of load transistors is connected;   a second readout circuit that is arranged at a second side of the pixel array and reads out signals from the pixel array, via column signal lines, of the plurality of column signal lines, to which respective load transistors of the plurality of second load transistors are connected; and   a plurality of second bias supply units, wherein second load transistors, of the plurality of second load transistors, which are arranged adjacent to each other, are biased by different second bias supply units of the plurality of second bias supply units.   
     
     
         10 . The image sensing device according to  claim 9 ,
 wherein each pixel in the pixel array includes a photoelectric conversion unit and a color filter, and   wherein pixels from which signals are read out by the readout circuit in a same period thorough the column signal lines, to which the load transistors arranged adjacent to each other are connected, have a same color, and pixels from which signals are read out by the second readout circuit in a same period thorough the column signal lines, to which the second load transistors arranged adjacent to each other are connected, have a same color.   
     
     
         11 . An image sensing system comprising:
 an image sensing device according to  claim 7 ;   an optical system in which an image is formed on an imaging surface of the image sensing device; and   a signal processing unit that processes signals output from the image sensing device to generate image data.