US2012322348A1PendingUtilityA1
Pad for chemical mechanical polishing and method of chemical mechanical polishing using same
Est. expiryDec 22, 2029(~3.4 yrs left)· nominal 20-yr term from priority
Inventors:Katsutaka YokoiAyako MaekawaHirotaka ShidaSatoshi KamoShinji TonshoKeiichi SatouNaoki NishiguchiHiroyuki Tano
H10P 52/00C08L 71/00C08G 18/7664C08G 18/74C08G 18/4833C08G 18/4854C08G 18/4804B24B 37/24C08L 2205/03B24B 37/042C08L 2205/025C08L 75/04
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Claims
Abstract
A chemical mechanical polishing pad includes a polishing layer formed using a composition that includes a thermoplastic polyurethane, the polishing layer having a specific gravity of 1.15 to 1.30, and a durometer D hardness of 50 to 80.
Claims
exact text as granted — not AI-modified1 . A chemical mechanical polishing pad, comprising:
a polishing layer comprising a composition that comprises a thermoplastic polyurethane, wherein a specific gravity of the polishing layer is from 1.15 to 1.30, and a durometer D hardness of the polishing layer is from 50 to 80.
2 . The chemical mechanical polishing pad of claim 1 , wherein the polishing layer has a residual strain of from 2 to 10% when applying tension to the polishing layer.
3 . The chemical mechanical polishing pad of claim 1 , wherein the polishing layer has a volume change rate of from 0.8 to 5.0% when immersed in water at 23° C. for 24 hours.
4 . The chemical mechanical polishing pad of claim 1 , wherein the polishing layer has a surface hardness of from 2 to 10 N/mm 2 after being immersed in water at 23° C. for 4 hours.
5 . The chemical mechanical polishing pad of claim 1 , wherein the thermoplastic polyurethane comprises a repeating unit derived from an alicyclic isocyanate, an aromatic isocyanate, or any combination thereof.
6 . The chemical mechanical polishing pad of claim 1 , wherein the composition further comprises water-soluble particles.
7 . A chemical mechanical polishing method, comprising:
chemically and mechanically polishing a polishing target with the chemical mechanical polishing pad of claim 1 .
8 . The chemical mechanical polishing pad of claim 5 , wherein the thermoplastic polyurethane comprises a repeating unit derived from isophorone diisocyanate (IPDI), norbornene diisocyanate, hydrogenated 4,4′-diphenylmethane diisocyanate (hydrogenated MDI), 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, naphthalene diisocyanate, 1,5-naphthalene diisocyanate, p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylene diisocyanate, or any combination thereof.
9 . The chemical mechanical polishing pad of claim 1 , wherein the thermoplastic polyurethane comprises a repeating unit derived from a polyether polyol, a polyester polyol, a polycarbonate polyol, a polyolefin polyol, or any combination thereof.
10 . The chemical mechanical polishing pad of claim 1 , wherein the composition further comprises an additional polymer compound other than the thermoplastic polyurethane.
11 . The chemical mechanical polishing pad of claim 10 , wherein the additional polymer has a water absorption of from 3 to 3000%.
12 . The chemical mechanical polishing pad of claim 10 , wherein the additional polymer comprises an ether bond, an ester bond, an amide bond, or any combination thereof.
13 . The chemical mechanical polishing pad of claim 6 , wherein the water-soluble particles are uniformly dispersed in the composition.Join the waitlist — get patent alerts
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