US2012322348A1PendingUtilityA1

Pad for chemical mechanical polishing and method of chemical mechanical polishing using same

Assignee: YOKOI KATSUTAKAPriority: Dec 22, 2009Filed: Dec 14, 2010Published: Dec 20, 2012
Est. expiryDec 22, 2029(~3.4 yrs left)· nominal 20-yr term from priority
H10P 52/00C08L 71/00C08G 18/7664C08G 18/74C08G 18/4833C08G 18/4854C08G 18/4804B24B 37/24C08L 2205/03B24B 37/042C08L 2205/025C08L 75/04
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Claims

Abstract

A chemical mechanical polishing pad includes a polishing layer formed using a composition that includes a thermoplastic polyurethane, the polishing layer having a specific gravity of 1.15 to 1.30, and a durometer D hardness of 50 to 80.

Claims

exact text as granted — not AI-modified
1 . A chemical mechanical polishing pad, comprising:
 a polishing layer comprising a composition that comprises a thermoplastic polyurethane,   wherein a specific gravity of the polishing layer is from 1.15 to 1.30, and   a durometer D hardness of the polishing layer is from 50 to 80.   
     
     
         2 . The chemical mechanical polishing pad of  claim 1 , wherein the polishing layer has a residual strain of from 2 to 10% when applying tension to the polishing layer. 
     
     
         3 . The chemical mechanical polishing pad of  claim 1 , wherein the polishing layer has a volume change rate of from 0.8 to 5.0% when immersed in water at 23° C. for 24 hours. 
     
     
         4 . The chemical mechanical polishing pad of  claim 1 , wherein the polishing layer has a surface hardness of from 2 to 10 N/mm 2  after being immersed in water at 23° C. for 4 hours. 
     
     
         5 . The chemical mechanical polishing pad of  claim 1 , wherein the thermoplastic polyurethane comprises a repeating unit derived from an alicyclic isocyanate, an aromatic isocyanate, or any combination thereof. 
     
     
         6 . The chemical mechanical polishing pad of  claim 1 , wherein the composition further comprises water-soluble particles. 
     
     
         7 . A chemical mechanical polishing method, comprising:
 chemically and mechanically polishing a polishing target with the chemical mechanical polishing pad of  claim 1 .   
     
     
         8 . The chemical mechanical polishing pad of  claim 5 , wherein the thermoplastic polyurethane comprises a repeating unit derived from isophorone diisocyanate (IPDI), norbornene diisocyanate, hydrogenated 4,4′-diphenylmethane diisocyanate (hydrogenated MDI), 2,4-tolylene diisocyanate, 2,6-tolylene diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, naphthalene diisocyanate, 1,5-naphthalene diisocyanate, p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylene diisocyanate, or any combination thereof. 
     
     
         9 . The chemical mechanical polishing pad of  claim 1 , wherein the thermoplastic polyurethane comprises a repeating unit derived from a polyether polyol, a polyester polyol, a polycarbonate polyol, a polyolefin polyol, or any combination thereof. 
     
     
         10 . The chemical mechanical polishing pad of  claim 1 , wherein the composition further comprises an additional polymer compound other than the thermoplastic polyurethane. 
     
     
         11 . The chemical mechanical polishing pad of  claim 10 , wherein the additional polymer has a water absorption of from 3 to 3000%. 
     
     
         12 . The chemical mechanical polishing pad of  claim 10 , wherein the additional polymer comprises an ether bond, an ester bond, an amide bond, or any combination thereof. 
     
     
         13 . The chemical mechanical polishing pad of  claim 6 , wherein the water-soluble particles are uniformly dispersed in the composition.

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