Transistor of semiconductor device and method of fabricating the same

Abstract

A method of fabricating a transistor of a semiconductor device comprises: forming a gate in a NMOS region and a PMOS region of a semiconductor substrate; forming a gate spacer on a sidewall of the gate; performing an ion implantation process on the NMOS region to form a junction region in the NMOS region; depositing an oxide film on the entire surface of the semiconductor substrate including the gate; removing hydrogen (H) existing in the oxide film and the gate spacer; and removing the oxide film in the PMOS region and performing a ion implantation process on the PMOS region to form a junction region in the PMOS region.

1 - 8 . (canceled) 
     
     
         9 . A transistor of a semiconductor device comprising:
 a gate formed on NMOS and PMOS regions of a semiconductor substrate,. respectively;   a junction region formed between the gate of the NMOS and PMOS regions, and a neighboring semiconductor substrate; and   an oxide film formed only over the junction region of the NMOS,   wherein the oxide film is an oxide film in which hydrogen (H) is removed to reduce a level of hydrogen in the oxide film.   
     
     
         10 . (canceled) 
     
     
         11 . The transistor of  claim 9 , further comprising gate spacers formed over sidewalls of the gates in the NMOS and PMOS regions, wherein the gate spacers are gate spacers in which hydrogen is removed to reduce a level of hydrogen in the gate spacers. 
     
     
         12 . The transistor of  claim 9 , further comprising a nitride film spacer deposited on the NMOS region.