Formation of Field Effect Transistor Devices

Abstract

A method includes defining active regions on a substrate, forming a dummy gate stack material over exposed portions of the active regions of the substrate and non-active regions of the substrate, removing portions of the dummy gate stack material to expose portions of the active regions and non-active regions of the substrate and define dummy gate stacks, forming a gap-fill dielectric material over the exposed portions of the substrate and the source and drain regions, removing portions of the gap-fill dielectric material to expose the dummy gate stacks, removing the dummy gate stacks to form dummy gate trenches, forming dividers within the dummy gate trenches, depositing gate stack material inside the dummy gate trenches, over the dividers, and the gap-fill dielectric material, and removing portions of the gate stack material to define gate stacks.

1 .- 15 . (canceled) 
     
     
         16 . A semiconductor device, comprising:
 a gate stack disposed on a substrate;   a first portion of the gate stack contacting a first dielectric material; and   a second portion of the gate stack contacting a printable dielectric material.   
     
     
         17 . The device of  claim 16 , wherein the first dielectric material is arranged on the substrate. 
     
     
         18 . The device of  claim 16 , wherein the printable dielectric material includes a hydrogen silsesquioxane material. 
     
     
         19 . The device of  claim 16 , wherein the printable dielectric material includes a methyl silsesquioxane material. 
     
     
         20 . A semiconductor device comprising:
 a first gate stack disposed on a substrate;   a second gate stack disposed on the substrate; and   a printable dielectric material disposed between the first gate stack and the second gate stack.