US2012305183A1PendingUtilityA1

Semiconductor device manufacturing apparatus

Assignee: YAEGASHI HIDETAMIPriority: Feb 15, 2008Filed: Aug 21, 2012Published: Dec 6, 2012
Est. expiryFeb 15, 2028(~1.6 yrs left)· nominal 20-yr term from priority
H10P 76/4088H10P 76/204H10P 76/4085H10B 69/00G03F 7/70433H10P 72/0418H10P 50/695
49
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A semiconductor device manufacturing apparatus includes: a first pattern forming unit for forming a first pattern by patterning a first mask material layer; a trimming unit for reducing a width of the first pattern to a predetermined width; a boundary layer forming unit for forming a boundary layer, on a surface of the first pattern; a second mask material layer forming unit for forming a second mask material layer on a surface of the boundary layer; a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; and a boundary layer etching unit for exposing the first pattern and forming a second pattern having the second mask material layer at a top portion thereof by etching the boundary layer.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device manufacturing apparatus for forming a mask for etching an etching target layer on a substrate, the apparatus comprising:
 a first pattern forming unit for forming a first pattern by patterning a first mask material layer made of a photoresist;   a trimming unit for reducing a width of the first pattern to a predetermined width;   a boundary layer forming unit for forming a boundary layer, which is made of a material selectively removable with respect to the photoresist, on a surface of the first pattern;   a second mask material layer forming unit for forming a second mask material layer, which is made of a material that allows the boundary layer to be selectively removed, on a surface of the boundary layer;   a second mask material removing unit for removing a part of the second mask material layer to expose top portions of the boundary layer; and   a boundary layer etching unit for exposing the first pattern and forming a second pattern having the second mask material layer at a top portion thereof by etching the boundary layer.   
     
     
         2 . The semiconductor device manufacturing apparatus of  claim 1 , further comprising:
 a first pattern surface treating unit for modifying or hardening a surface of the first pattern; and   a second pattern trimming unit for reducing a width of the second pattern to a predetermined width.

Join the waitlist — get patent alerts

Track US2012305183A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.