Systems and methods to cool semiconductor

Abstract

Systems and methods are disclosed for fabricating a semiconductor device by forming heat conducting nanowires on a first side of a wafer; and depositing semiconductor structures on a second side of the wafer.

1 . A method for fabricating a semiconductor device, comprising:
 forming heat conducting nanowires on a first side of a wafer;   depositing semiconductor structures on a second side of the wafer.   
     
     
         2 . The method of  claim 1 , comprising forming 3D heat conducting nanowires on the first side of the wafer. 
     
     
         3 . The method of  claim 1 , comprising
 depositing conductive filler between the nanowires; and   planarizing the nanowires and the conductive filler   
     
     
         4 . The method of  claim 1 , wherein planarizing comprises performing chemical-mechanical planarization. 
     
     
         5 . The method of  claim 1 , comprising
 patterning and etching cavities on the first side;   depositing an interface material on the cavities;   forming nanotubes on the cavities; and   depositing a conductive filler between the nanowires.   
     
     
         6 . A method for fabricating a heat remover, comprising:
 forming heat conducting nanowires on a first side of a substrate;   providing a heat conducting interface layer on a second side of the substrate; and   mounting the bottom of the substrate to an electronic device.   
     
     
         6 . The method of  claim 6 , comprising forming one or more cooling fins above heat conducting nanowires. 
     
     
         7 . The method of  claim 6 , comprising attaching an external cooler to the electronic device. 
     
     
         8 . The method of  claim 7 , wherein the external cooler comprises one of: a heat spreader, a heat pipe, a heat sink. 
     
     
         9 . The method of  claim 6 , comprising removing the nanowires to form channels to circulate a heat conducting fluid therein. 
     
     
         10 . A semiconductor device, comprising:
 a die having heat conducting nanowires on a first side of the die and semiconductor structures on a second side of the die; and   an external cooler to remove heat from the nanowires.   
     
     
         11 . The semiconductor device of  claim 10 , wherein the nanowires comprise one of: rod shape, cone shape, spring shape, three-dimensional shape. 
     
     
         12 . The semiconductor device of  claim 10 , comprising an encapsulation around the die having microchannels therein. 
     
     
         13 . The semiconductor device of  claim 12 , comprising: a thermal transport fluid disposed in the microchannels. 
     
     
         14 . The semiconductor device of  claim 12 , comprising a pump that circulates the thermal transport fluid through the microchannels. 
     
     
         15 . The semiconductor device of  claim 12 , comprising a heat exchanger. 
     
     
         16 . The semiconductor device of  claim 10 , wherein the nanotubes are oriented generally perpendicular to the die. 
     
     
         17 . The semiconductor device of  claim 10 , comprising a heat remover between the die and the external cooler, the heat remover having heat conducting nanowires on a first surface and a heat conducting interface layer on a second surface. 
     
     
         18 . The semiconductor device of  claim 17 , wherein the heat remover is etched to provide fins. 
     
     
         19 . The semiconductor device of  claim 10 , wherein the die comprises:
 patterned cavities etched on the first side; and   an interface material deposited on the cavities;   
     
     
         20 . The semiconductor device of  claim 10 , wherein the die comprises a conductive filler deposited between the nanowires.