US2012282749A1PendingUtilityA1
High performance resonant element
Individually held — no corporate assignee on recordPriority: Jun 12, 2006Filed: Nov 2, 2011Published: Nov 8, 2012
Est. expiryJun 12, 2026(expired)· nominal 20-yr term from priority
H04B 3/14
45
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Claims
Abstract
A method of forming a semiconductor device for processing a signal includes providing a circuit board including an input signal line, providing a high performance resonant element connected to the input signal line, and providing an output signal line connected to the high performance resonant element. The high performance resonant element includes a via.
Claims
exact text as granted — not AI-modified1 . A method of forming a semiconductor device for processing a signal, said method comprising:
providing a circuit board including an input signal line; providing a high performance resonant element connected to said input signal line; and providing an output signal line connected to said high performance resonant element, wherein said high performance resonant element comprises a via.
2 . The method of claim 1 , further comprising reducing a length of said via.
3 . The method of claim 2 , wherein said reducing comprises one of backdrilling and milling of said via.
4 . The method of claim 2 , wherein said reducing comprises adjusting a thickness of said circuit board.
5 . The method of claim 1 , wherein said signal comprises a plurality of frequency components.
6 . The method of claim 5 , wherein said via processes said plurality of frequency component to provide a desired output signal.
7 . The method of claim 6 , wherein said via attenuates at least one of said plurality of frequency components.
8 . The method of claim 7 , wherein said at least one of said plurality of frequencies comprises a noise frequency.
9 . The method of claim 7 , wherein said via permits at least one other of said plurality of frequency components to pass.Join the waitlist — get patent alerts
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