Film deposition apparatus, method of manufacturing a semiconductor device, and method of coating the film deposition apparatus

Abstract

A method of manufacturing a semiconductor device has supplying a first reactant gas into buffer chamber provided in a reaction chamber of the film deposition apparatus to form a first film over an inner wall surface of the buffer chamber, and supplying a second reactant gas into the reaction chamber to form a second film over a semiconductor substrate.

1 . A film deposition apparatus, comprising:
 a reaction chamber housing a substrate;   a buffer chamber provided in the reaction chamber;   a first gas supply section supplying a first reactant gas and a second reactant gas into the buffer chamber; and   a plasma generator generating plasma in the buffer chamber.   
     
     
         2 . The film deposition apparatus according to  claim 1 , wherein the first gas supply section includes a first nozzle supplying the first reactant gas into the buffer chamber, and a second nozzle supplying the second reactant gas into the buffer chamber. 
     
     
         3 . The film deposition apparatus according to  claim 1 , further comprising:
 a second gas supply section outside of the buffer chamber, wherein the second gas supply section supplies a third reactant gas into the reaction chamber.   
     
     
         4 . The film deposition apparatus according to  claim 1 , wherein the second reactant gas is a silane-based gas. 
     
     
         5 . The film deposition apparatus according to  claim 3 , wherein the film deposition apparatus is an atomic layer deposition apparatus capable of forming a film over the substrate by an atomic layer deposition method using the first reactant gas and the third reactant gas. 
     
     
         6 . The film deposition apparatus according to  claim 5 , wherein
 the first reactant gas includes an ammonia gas,   the third reactant gas includes a dichlorosilane gas.   
     
     
         7 . The film deposition apparatus according to  claim 1 , wherein
 the first reactant gas includes an ammonia gas, and   the second reactant gas includes any one of a dichlorosilane gas and a silane gas.