Fabricating method of active device array substrate

Abstract

A fabricating method of an active device array substrate is provided. The active device array substrate has at least one patterned conductive layer. The patterned conductive layer includes a copper layer. A cross-section of the copper layer which is parallel to a normal line direction of the copper layer includes a first trapezoid and a second trapezoid stacked on the first trapezoid. A base angle of the first trapezoid and a base angle of the second trapezoid are acute angles, and a difference between the base angle of the first trapezoid and the base angle of the second trapezoid is from about 5° to about 30°.

1 . A fabricating method of an active device array substrate, comprising:
 depositing a first copper layer at a first deposition rate on a substrate;   depositing a second copper layer at a second deposition rate on the first copper layer, wherein the first deposition rate is substantially greater than the second deposition rate; and   patterning the first copper layer and the second copper layer.   
     
     
         2 . The fabricating method of the active deice array substrate as claimed in  claim 1 , wherein after the first copper layer and the second copper layer are patterned, a first cross-section of the first copper layer which is substantially parallel to a normal line direction of the first copper layer is a first trapezoid, a second cross-section of the second copper layer which is parallel to the normal line direction of the first copper layer is a second trapezoid, a base angle of the first trapezoid and a base angle of the second trapezoid are acute angles, and a difference between the base angle of the first trapezoid and the base angle of the second trapezoid is from about 5° to about 30°. 
     
     
         3 . The fabricating method of the active device array substrate as claimed in  claim 1 , wherein a depositing method of the first copper layer and the second copper layer comprises sputtering. 
     
     
         4 . The fabricating method of the active device array substrate as claimed in  claim 1 , wherein the first deposition rate is at least two times the second deposition rate. 
     
     
         5 . The fabricating method of the active device array substrate as claimed in  claim 1 , further comprising depositing a barrier layer on the substrate before the step of depositing the first copper layer, wherein the first copper layer is deposited on the barrier layer.