US2012270351A1PendingUtilityA1
Low temperature bi-cmos compatible process for mems rf resonators and filters
Est. expiryDec 10, 2021(expired)· nominal 20-yr term from priority
Inventors:Leena Paivikki BuchwalterKevin K. ChanTimothy J. DaltonChristopher V. JahnesJennifer LundKevin S. PetrarcaJames L. SpeidellJames Francis Ziegler
H03H 9/2405B81C 1/00246B81B 2201/0271H03H 3/0072B81C 1/0023B81C 2203/0735
45
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Claims
Abstract
A method of removal of a first and second sacrificial layer wherein an O 2 plasma or an O 2 -containing environment is introduced to a cavity and a gap region through a plurality of via holes in a cavity capping material.
Claims
exact text as granted — not AI-modified1 . A method of removal of a first and second sacrificial layer wherein the sacrificial material is exposed to an oxygen plasma.
2 . A method of removal of a first and second sacrificial layer wherein the sacrificial material is exposed to an anneal in an oxygen containing environment.
3 . The method of removal of a first and second sacrificial layer of claim 2 , wherein the first and second sacrificial layers are exposed to the anneal in the oxygen containing environment at a temperature less than 400 degrees C.
4 . A method of removal of a first and second sacrificial layer wherein an O 2 plasma or an O 2 -containing environment is introduced to a cavity and a gap region through a plurality of via holes in a cavity capping material.
5 . The method of claim 4 , wherein the first and second sacrificial layers are a carbon-based material.
6 . The method of claim 4 , wherein the removal of the first and second sacrificial layers is performed without a subsequent rinsing of the cavity.
7 . The method of claim 4 , further comprising capping the cavity with a second material having a resistance to etching greater than that of the first and second sacrificial layers.
8 . The method of claim 4 , further comprising forming one of a microelectromechanical resonator and a microelectromechanical filter in the cavity before the removal of the first and second sacrificial layers.
9 . The method of claim 4 , further comprising sealing the plurality of holes, wherein the plurality of holes have an aspect ratio to substantially prevent a sealing material from entering the cavity.Join the waitlist — get patent alerts
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