Apparatus and method for uv treatment, chemical treatment, and deposition

Abstract

Embodiments of the present invention provide apparatus and methods for performing UV treatment and chemical treatment and/or deposition in the same chamber. One embodiment of the present invention provides a processing chamber including a UV transparent gas distribution showerhead disposed above a substrate support located in an inner volume of the processing chamber, a UV transparent window disposed above the UV transparent gas distribution showerhead, and a UV unit disposed outside the inner volume. The UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.

1 . A processing chamber, comprising:
 a chamber body defining an inner volume;   a substrate support disposed in the inner volume;   a UV transparent gas distribution showerhead disposed above the substrate support;   a UV transparent window disposed above the UV transparent gas distribution showerhead, wherein a gas volume is formed between the UV transparent gas distribution showerhead and the UV transparent window, and the gas volume and the inner volume are in fluid communication through the UV transparent gas distribution showerhead; and   a UV unit disposed outside the UV transparent window, wherein the UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead.   
     
     
         2 . The processing chamber of  claim 1 , wherein the UV transparent gas distribution showerhead comprises:
 a body formed from a substantially UV transparent material; and   a coating configured to protect the body from exposing to processing gases flowing through the UV transparent gas distribution showerhead.   
     
     
         3 . The processing chamber of  claim 2 , wherein the body is formed from quartz. 
     
     
         4 . The processing chamber of  claim 3 , wherein the coating comprises an aluminum oxynitride film. 
     
     
         5 . The processing chamber of  claim 4 , wherein the aluminum oxynitride film is formed by plasma enhanced chemical deposition. 
     
     
         6 . The processing chamber of  claim 3 , wherein the coating comprises sapphire. 
     
     
         7 . The processing chamber of  claim 1 , wherein the UV transparent window comprises:
 a body formed from quartz; and   a coating configured to protect the body from exposure to processing gases in the gas volume.   
     
     
         8 . The processing chamber of  claim 1 , further comprising:
 a clamping member disposed in an upper opening of the chamber body, wherein the clamping member is disposed between the UV transparent gas distribution showerhead and the UV transparent window, and a gas flow path is formed within the clamping member.   
     
     
         9 . The processing chamber of  claim 8 , wherein the clamping member has:
 a ring shaped body;   a flange extending radially outwards from an upper portion of the ring shaped body, wherein the flange is coupled to the chamber body; and   a step extending radially inwards from a lower portion of the ring shaped body, wherein the UV transparent gas distribution showerhead is disposed on a top surface of the step.   
     
     
         10 . The processing chamber of  claim 9 , wherein the gas flow path includes:
 a horizontal slot formed in the flange, wherein the horizontal slot opens at an outer surface of the flange;   a vertical slot formed in the ring shaped body, wherein the vertical slot is connected to the horizontal slot at an upper end;   an plenum formed in the lower portion of the ring shaped body, wherein a lower end of the vertical slot opens to the plenum; and   a plurality of spoke apertures formed through the step, wherein each of the plurality of apertures has a first end opening to the plenum and a second end opening to an inner surface of the step.   
     
     
         11 . The processing chamber of  claim 9 , further comprising an input manifold coupled to the clamping member, wherein an outlet of the input manifold is connected to the gas flow path formed in the clamping member. 
     
     
         12 . The processing chamber of  claim 11 , further comprising:
 a remote plasma source connected to the input manifold; and   a gas panel connected to the input manifold.   
     
     
         13 . A processing system, comprising:
 a transfer chamber defining a transfer volume;   a substrate transfer robot disposed in the transfer volume; and   a twin volume processing chamber coupled to the transfer chamber, wherein the twin volume processing chamber comprises:
 a chamber body defining a first inner volume and a second inner volume; 
 a first substrate support disposed in the first inner volume; 
 a first UV transparent gas distribution showerhead disposed above the first substrate support; 
 a first UV transparent window disposed above the first UV transparent gas distribution showerhead, wherein a first gas volume is formed between the first UV transparent gas distribution showerhead and the first UV transparent window, and the first gas volume and the first inner volume are in fluid communication through the first UV transparent gas distribution showerhead; 
 a first UV unit disposed outside the first UV transparent window, wherein the first UV unit is configured to direct UV lights towards the first substrate support through the first UV transparent window and the first UV transparent gas distribution showerhead; 
 a second substrate support disposed in the second inner volume; 
 a second UV transparent gas distribution showerhead disposed above the second substrate support; 
 a second UV transparent window disposed above the second UV transparent gas distribution showerhead, wherein a second gas volume is formed between the second UV transparent gas distribution showerhead and the second UV transparent window, and the second gas volume and the second inner volume are in fluid communication through the second UV transparent gas distribution showerhead; and 
 a second UV unit disposed outside the second UV transparent window, wherein the second UV unit is configured to direct UV lights towards the second substrate support through the second UV transparent window and the second UV transparent gas distribution showerhead. 
   
     
     
         14 . The system of  claim 13 , wherein the twin volume processing chamber further comprises:
 a first clamping member disposed between the first UV transparent gas distribution showerhead and the first UV transparent window, wherein a first gas flow path is formed within the first clamping member; and   a second clamping member disposed between the second UV transparent gas distribution showerhead and the second UV transparent window, wherein a second gas flow path is formed within the second clamping member, and the first and second flow paths are mirror images of one another.   
     
     
         15 . The system of  claim 13 , wherein the first UV transparent gas distribution showerhead comprises:
 a body formed from a UV transparent material; and   a coating configured to protect the body from exposing to processing gases flowing through the first UV transparent gas distribution showerhead.   
     
     
         16 . The system of  claim 13 , wherein the first UV transparent window comprises:
 a body formed from quartz; and   a coating configured to protect the body from exposing to processing gases in the first gas volume.   
     
     
         17 . A method for processing a substrate, comprising:
 receiving a substrate on a substrate support disposed in an inner volume of a processing chamber, wherein the processing chamber comprises:
 a UV transparent gas distribution showerhead disposed above the substrate support; 
 a UV transparent window disposed above the UV transparent gas distribution showerhead; and 
 a UV unit disposed outside the inner volume, wherein the UV unit is configured to direct UV lights towards the substrate support through the UV transparent window and the UV transparent gas distribution showerhead; 
   chemically treating the substrate by flowing one or more processing gas through the UV transparent gas distribution showerhead from a gas volume defined between the UV transparent window and the UV transparent gas distribution showerhead; and   curing the substrate by directing a UV energy towards the substrate from the UV unit through the UV transparent gas distribution showerhead and the UV transparent window.   
     
     
         18 . The method of  claim 17 , wherein chemically treating the substrate comprises flowing one or more processing gas comprising a silylation agent for chemically treating a low k film formed on the substrate. 
     
     
         19 . The method of  claim 18 , wherein the chemical treating and the curing are performed simultaneously. 
     
     
         20 . The method of  claim 18 , wherein the chemical treating is performed before the curing.