Method of preparing a patterned film with a developing solvent

Abstract

A method of preparing a patterned film on a substrate includes applying a silicone composition onto a substrate to form a film of the silicone composition. A portion of the film is exposed to radiation to produce a partially exposed film having an exposed region and a non-exposed region. The partially exposed film is heated for a sufficient amount of time and at a sufficient temperature to substantially insolubilize the exposed region in a developing solvent that includes a siloxane component. The non-exposed region of the partially exposed film is removed with the developing solvent to reveal a film-free region on the substrate and to form the patterned film including the exposed region that remains on the substrate. The film-free regions is substantially free of residual silicone due to the presence of the siloxane component in the developing solvent.

1 - 13 . (canceled) 
     
     
         14 . An article comprising:
 a substrate;   a patterned film formed from a silicone composition and disposed on said substrate,   said substrate including a film-free region substantially free of residual silicone after, optionally, etching said patterned film with plasma for a period of less than 180 seconds.   
     
     
         15 . An article as set forth in  claim 14  wherein said film-free region is substantially free of residual silicone without etching said patterned film with plasma. 
     
     
         16 . An article as set forth in  claim 15  wherein said film-free region is visually free of residual silicone under 100× magnification. 
     
     
         17 . An article as set forth in  claim 14  wherein said film-free region is visually free of residual silicone under 100× magnification. 
     
     
         18 . An article as set forth in  claim 14  where said silicone composition comprises:
 (A) an organopolysiloxane having an average of at least two silicon-bonded alkenyl groups per molecule; 
 (B) an organosilicon having an average of at least two silicon-bonded hydrogen atoms per molecule in an amount sufficient to cure said silicone composition; and 
 (C) a hydrosilylation catalyst. 
 
     
     
         19 . An article as set forth in  claim 18  wherein said organosilicon is selected from the group of organosilanes, organohydrogensiloxanes, and combinations thereof. 
     
     
         20 . An article as set forth in  claim 18  wherein said organosilicon is present in a sufficient amount to provide from 0.7 to 1.2 silicon-bonded hydrogen atoms per alkenyl group in said organopolysiloxane. 
     
     
         21 . An article as set forth in  claim 18  wherein said hydrosilylation catalyst comprises a platinum(II) β-diketonate. 
     
     
         22 . An article as set forth in  claim 21  wherein said platinum(II) β-diketonate comprises platinum(II) bis(2,4-pentanedioate). 
     
     
         23 . An article as set forth in  claim 14  further defined as a semiconductor device comprising an integrated circuit chip. 
     
     
         25 . (canceled) 
     
     
         26 . An article as set forth in  claim 14  further defined as a wafer including at least two integrated circuit chips.