US2012256181A1PendingUtilityA1

Power-generating module with solar cell and method for fabricating the same

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Assignee: SHIEH JIA-MINPriority: Apr 11, 2011Filed: Jun 10, 2011Published: Oct 11, 2012
Est. expiryApr 11, 2031(~4.7 yrs left)· nominal 20-yr term from priority
Inventors:Jia-Min ShiehChang-Hong ShenWen-Hsien HuangBau-Tong DaiJung Yen HuangHao-Chung Kuo
H10F 77/1698H10F 71/00H10F 10/17H10F 19/50Y02E10/548
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Claims

Abstract

The invention discloses a power-generating module with solar cell and method for fabricating the same. The power-generating module includes a flexible substrate, a circuit and a solar cell. Both of the circuit and the solar cell are formed on the flexible substrate and are connected with each other, such that the solar cell is capable of providing the power needed by the circuit for operation.

Claims

exact text as granted — not AI-modified
1 . A power-generating module with solar cell, comprising:
 a flexible substrate;   a circuit unit, formed on the flexible substrate; and   a solar cell unit, formed on the flexible substrate and coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.   
     
     
         2 . The power-generating module with solar cell of  claim 1 , wherein the flexible substrate is a PEN substrate, a PET substrate or a polyimide substrate. 
     
     
         3 . The power-generating module with solar cell of  claim 1 , wherein the circuit unit is a thin film transistor. 
     
     
         4 . The power-generating module with solar cell of  claim 3 , wherein the thin film transistor further comprises:
 an active layer, formed on the flexible substrate;   a source electrode structure, formed on the active layer;   a drain electrode structure, formed on the active layer; and   a gate electrode structure, formed in between the source electrode structure and the drain electrode structure.   
     
     
         5 . The power-generating module with solar cell of  claim 3 , wherein the electron mobility of the thin film transistor is about 1.1 cm 2 /V-s. 
     
     
         6 . The power-generating module with solar cell of  claim 1 , wherein the solar cell unit further comprises:
 a metallic layer, formed on the flexible substrate;   a first oxide layer, formed on the metallic layer;   a p-i-n multi-layer structure, formed on the first oxide layer;   a second oxide layer, formed on the p-i-n multi-layer structure;   a first conductive layer, formed on the second oxide layer; and   a second conductive layer, formed on the first oxide layer.   
     
     
         7 . The power-generating module with solar cell of  claim 6 , wherein the first oxide layer is formed of transparent conducting oxide (TCO), and the second oxide layer is formed of Indium Tin Oxide (ITO). 
     
     
         8 . The power-generating module with solar cell of  claim 6 , wherein the p-i-n multi-layer structure is an hydrogenated amorphous silicon structure. 
     
     
         9 . The power-generating module with solar cell of  claim 1 , wherein the photovoltaic conversion efficiency of the solar cell unit is about 9.6%. 
     
     
         10 . A method for fabricating a power-generating module with solar cell, comprising the following steps of:
 providing a flexible substrate;   forming a solar cell unit on the flexible substrate by using a high density plasma at a temperature lower than about 150° C.; and   forming a circuit unit on the flexible substrate;   wherein the solar cell unit is coupled to the circuit unit, so as to provide the power needed for the operation of the circuit unit.   
     
     
         11 . The method of  claim 10 , wherein forming the solar cell unit further comprises the following steps of:
 (a) forming a metallic layer on the flexible substrate;   (b) forming a first oxide layer on the metallic layer;   (c) forming a p-i-n multi-layer structure on the first oxide layer by using the high density plasma at a temperature lower than 150° C.;   (d) forming a second oxide layer on the p-i-n multi-layer structure;   (e) forming a first conductive layer on the second oxide layer; and   (f) forming a second conductive layer on the first oxide layer.   
     
     
         12 . The method of  claim 11 , wherein the p-i-n multi-layer structure is a hydrogenated amorphous silicon structure. 
     
     
         13 . The method of  claim 11 , further comprising the following steps in between step (e) and step (f):
 (e′) etching the p-i-n multi-layer structure to expose at least a part of the first oxide layer, and the second conductive layer of step (f) is formed on the exposed part of the first oxide layer.   
     
     
         14 . The method of  claim 11 , wherein step (c) further comprises the following steps of:
 (c1) forming a n-type layer on the first oxide layer under a first process condition, wherein the first process condition comprises a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W and a deposition rate between 2 and 4 A/s;   (c2) forming an i-type layer on the n-type layer under a second process condition, wherein the second process condition comprises a process pressure between 600 and 1200 mTorr, a process power between 15 and 40 W and a deposition rate between 1 and 2.5 A/s; and   (c3) forming a p-type layer on the i-type layer under a third process condition, wherein the third process condition comprises a process pressure between 600 and 1200 mTorr, a process power between 30 and 60 W and a deposition rate between 2 and 5 A/s.   
     
     
         15 . The method of  claim 14 , wherein in step (c1), the n-type layer is formed of a first reaction gas mixture, which comprises SiH 4 , H 2 , PH 3  and Ar, wherein the flow rate of SiH 4  is between 6 and 15 sccm, the flow rate of H 2  is between 100 and 250 sccm, the flow rate of PH 3  is between 0.5 and 1.5 sccm, and the flow rate of Ar is between 100 and 200 sccm. 
     
     
         16 . The method of  claim 14 , wherein in step (c2), the i-type layer is formed of a second reaction gas mixture, which comprises SiH 4 , H 2  and Ar, wherein the flow rate of SiH 4  is between 10 and 20 sccm, the flow rate of H 2  is between 100 and 250 sccm, and the flow rate of Ar is between 100 and 200 sccm. 
     
     
         17 . The method of  claim 14 , wherein in step (c3), the p-type layer is formed of a third reaction gas mixture, which comprises SiH 4 , H 2 , B 2 H 6  and Ar, wherein the flow rate of SiH 4  is between 6 and 15 sccm, the flow rate of H 2  is between 100 and 250 sccm, the flow rate of B 2 H 6  is between 0.5 and 1.5 sccm, and the flow rate of Ar is between 100 and 200 sccm. 
     
     
         18 . The method of  claim 11 , wherein the first oxide layer is formed of transparent conducting oxide (TCO), and the second oxide layer is formed of Indium Tin Oxide (ITO). 
     
     
         19 . The method of  claim 10 , wherein the flexible substrate is a PEN substrate, a PET substrate or a polyimide substrate. 
     
     
         20 . The method of  claim 10 , wherein the circuit unit is made of inductive coupling plasma technology.

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