Nonvolatile semiconductor memory device and method for manufacturing same

Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes: first and second stacked bodies, first and second semiconductor pillars, a connection portion, a memory film, and a partitioning insulating layer. The stacked bodes include electrode films stacked along a first axis and an inter-electrode insulating film provided between the electrode films. Through-holes are provided in the stacked bodies. The semiconductor pillars are filled into the through-holes. The connection portion electrically connects the semiconductor pillars. The memory film is provided between the semiconductor pillars and the electrode films. The partitioning insulating layer partitions the first and second electrode films. A side surface of the first through-hole on the partitioning insulating layer side and a side surface of the second through-hole on the partitioning insulating layer side have a portion parallel to a plane orthogonal to a second axis from the first stacked body to the second stacked body.

1 . A nonvolatile semiconductor memory device, comprising:
 a first stacked body including a plurality of first electrode films stacked along a first axis and a first inter-electrode insulating film provided between two of the first electrode films mutually adjacent along the first axis, a first through-hole being provided in the first stacked body to extend along the first axis;   a first semiconductor pillar filled into the first through-hole to extend along the first axis;   a second stacked body juxtaposed with the first stacked body along a second axis orthogonal to the first axis, the second stacked body including a plurality of second electrode films stacked along the first axis and a second inter-electrode insulating film provided between two of the second electrode films mutually adjacent along the first axis, a second through-hole being provided in the second stacked body to extend along the first axis;   a second semiconductor pillar filled into the second through-hole to extend along the first axis;   a connection portion electrically connecting the first semiconductor pillar to the second semiconductor pillar;   a memory film provided between the first semiconductor pillar and the plurality of first electrode films and between the second semiconductor pillar and the plurality of second electrode films; and   a partitioning insulating layer provided between the first stacked body and the second stacked body to partition the plurality of first electrode films from the plurality of second electrode films,   at least one selected from a side surface of the first through-hole on the partitioning insulating layer side and a side surface of the second through-hole on the partitioning insulating layer side being configured to have a portion parallel to a plane including the first axis and a third axis orthogonal to the first and second axes.   
     
     
         2 . The device according to  claim 1 , wherein a distance along the second axis from the partitioning insulating layer to an end of the plurality of first electrode films on the partitioning insulating layer side is the same as a distance along the second axis from the partitioning insulating layer to an end of the plurality of second electrode films on the partitioning insulating layer side. 
     
     
         3 . The device according to  claim 1 , wherein a side surface of the first through-hole on a side opposite to the partitioning insulating layer and a side surface of the second through-hole on a side opposite to the partitioning insulating layer have curved configurations parallel to the first axis. 
     
     
         4 . The device according to  claim 1 , wherein a side surface of the memory film on the partitioning insulating layer side has a portion parallel to the plane. 
     
     
         5 . The device according to  claim 1 , wherein at least one selected from a side surface of the first semiconductor pillar on the partitioning insulating layer side and a side surface of the second semiconductor pillar on the partitioning insulating layer side has a portion parallel to the plane. 
     
     
         6 . The device according to  claim 1 , wherein:
 a side surface of the first through-hole on a side opposite to the partitioning insulating layer has a protruding configuration protruding in a direction from the partitioning insulating layer toward the first through-hole; and   a side surface of the second through-hole on a side opposite to the partitioning insulating layer has a protruding configuration protruding in a direction from the partitioning insulating layer toward the second through-hole.   
     
     
         7 . The device according to  claim 1 , wherein a distance along the second axis from the partitioning insulating layer to an end of the first semiconductor pillar on the partitioning insulating layer side is the same as a distance along the second axis from the partitioning insulating layer to an end of the second semiconductor pillar on the partitioning insulating layer side. 
     
     
         8 . The device according to  claim 1 , wherein a width of the first through-hole along the second axis is different from a width of the second through-hole along the second axis. 
     
     
         9 . The device according to  claim 1 , wherein:
 the plurality of first electrode films has a portion that contacts the memory film and includes a silicide; and   the plurality of second electrode films has a portion that contacts the memory film and includes a silicide.   
     
     
         10 . The device according to  claim 9 , wherein:
 the portion of the plurality of first electrode films including the silicide and contacting the memory film is disposed along the first axis around a portion of the memory film opposing the first electrode films; and   the portion of the plurality of second electrode films including the silicide and contacting the memory film is disposed along the first axis around a portion of the memory film opposing the second electrode films.   
     
     
         11 . The device according to  claim 1 , wherein:
 the memory film includes a charge retaining film, an inner insulating film, and an outer insulating film;   the charge retaining film is provided between the first semiconductor pillar and the first electrode films and between the second semiconductor pillar and the second electrode films;   the inner insulating film is provided between the first semiconductor pillar and the charge retaining film and between the second semiconductor pillar and the charge retaining film; and   the outer insulating film is provided between the charge retaining film and the first electrode films and between the charge retaining film and the second electrode films.   
     
     
         12 . A method for manufacturing a nonvolatile semiconductor memory device, the device including: a first stacked body including a plurality of first electrode films stacked along a first axis and a first inter-electrode insulating film provided between two of the first electrode films mutually adjacent along the first axis, a first through-hole being provided in the first stacked body to extend along the first axis; a first semiconductor pillar filled into the first through-hole to extend along the first axis; a second stacked body juxtaposed with the first stacked body along a second axis orthogonal to the first axis, the second stacked body including a plurality of second electrode films stacked along the first axis and a second inter-electrode insulating film provided between two of the second electrode films mutually adjacent along the first axis, a second through-hole being provided in the second stacked body to extend along the first axis; a second semiconductor pillar filled into the second through-hole to extend along the first axis; a connection portion electrically connecting the first semiconductor pillar to the second semiconductor pillar; a partitioning insulating layer provided between the first stacked body and the second stacked body to partition the plurality of first electrode films from the plurality of second electrode films; and a memory film provided between the first semiconductor pillar and the plurality of first electrode films and between the second semiconductor pillar and the plurality of second electrode films, the method comprising:
 forming the partitioning insulating layer in a stacked main body used to form the first stacked body and the second stacked body;   forming a sidewall mask layer on a sidewall of a portion of the partitioning insulating layer; and   making the first through-hole and the second through-hole in the stacked main body by using the sidewall mask layer as a portion of a mask.   
     
     
         13 . The method according to  claim 12 , wherein the making of the first through-hole and the second through-hole includes patterning the stacked main body by using a mask having openings, the openings having a curved configuration corresponding to a configuration of a side surface of the first through-hole on a side opposite to the partitioning insulating layer and a curved configuration corresponding to a configuration of a side surface of the second through-hole on a side opposite to the partitioning insulating layer. 
     
     
         14 . The method according to  claim 13 , wherein:
 the curved configuration corresponding to the configuration of the side surface of the first through-hole on the side opposite to the partitioning insulating layer has a protruding configuration protruding in a direction from the partitioning insulating layer toward the first through-hole; and   the curved configuration corresponding to the configuration of the side surface of the second through-hole on the side opposite to the partitioning insulating layer has a protruding configuration protruding in a direction from the partitioning insulating layer toward the second through-hole.   
     
     
         15 . The method according to  claim 12 , wherein the making of the first through-hole and the second through-hole includes forming a portion parallel to a plane including the first axis and a third axis orthogonal to the first and second axes in at least one selected from a side surface of the first through-hole on the partitioning insulating layer side and a side surface of the second through-hole on the partitioning insulating layer side. 
     
     
         16 . The method according to  claim 12 , wherein the forming of the sidewall mask layer includes forming a sacrificial layer to cover an upper portion of the partitioning insulating layer and removing the sacrificial layer except for a portion of the sacrificial layer opposing the sidewall of the partitioning insulating layer. 
     
     
         17 . The method according to  claim 12 , further comprising:
 forming a memory film inside the first through-hole and the second through-hole; and   forming the first semiconductor pillar and the second semiconductor pillar by filling a semiconductor into a remaining space inside the first through-hole and the second through-hole.   
     
     
         18 . The method according to  claim 17 , wherein the forming of the first semiconductor pillar and the second semiconductor pillar includes causing a distance along the second axis from the partitioning insulating layer to an end of the first semiconductor pillar on the partitioning insulating layer side to be the same as a distance along the second axis from the partitioning insulating layer to an end of the second semiconductor pillar on the partitioning insulating layer side. 
     
     
         19 . The method according to  claim 12 , further comprising siliciding a portion of the first electrode film and siliciding a portion of the second electrode film via the first through-hole and the second through-hole. 
     
     
         20 . The method according to  claim 19 , further comprising
 forming a memory film inside the first through-hole and the second through-hole and   forming the first semiconductor pillar and the second semiconductor pillar by filling a semiconductor into a remaining space inside the first through-hole and the second through-hole   after the siliciding of the portion of the first electrode film and the siliciding of the portion of the second electrode film.