Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device includes a substrate having a first side and a second side such that the first and second sides face each other, a through via plug penetrating the substrate, an insulating film liner, and an antipollution film. The insulating film liner is between the through via plug and the substrate and the insulating film liner has a recessed surface with respect to the second side. The antipollution film covers the second side and the antipollution film is on the recessed surface and between the through via plug and the substrate.

1 . A semiconductor device, comprising:
 a substrate including a first side and a second side, the first and second sides facing each other;   a through via plug penetrating the substrate;   an insulating film liner between the through via plug and the substrate, the insulating film liner having a recessed surface with respect to the second side; and   an antipollution film covering the second side, the antipollution film being between the through via plug and a portion of the substrate on the recessed surface.   
     
     
         2 . The semiconductor device as claimed in  claim 1 , wherein a height difference between the second side and the recessed surface is equal to or less than a thickness of the insulating film liner. 
     
     
         3 . The semiconductor device as claimed in  claim 1 , further comprising an auxiliary insulating film on the antipollution film on the second side, the auxiliary insulating film being adjacent to the through via plug, and the antipollution film being between the through via plug and the auxiliary insulating film. 
     
     
         4 . The semiconductor device as claimed in  claim 1 , further comprising:
 transistors on the first side; and   a diffusion prevention film and a seed film between the through via plug and the antipollution film and between the through via plug and the insulating film liner.   
     
     
         5 . The semiconductor device as claimed in  claim 1 , wherein the antipollution film includes a silicon nitride film. 
     
     
         6 . The semiconductor device as claimed in  claim 1 , further comprising a redistributed interconnection pattern on the second side, the redistributed interconnection pattern contacting the through via plug. 
     
     
         7 - 12 . (canceled) 
     
     
         13 . A semiconductor device, comprising:
 a substrate including a first side and a second side, the first and second sides facing each other;   a through via plug penetrating the substrate, the through via plug including a protruding portion that extends beyond the second side of the substrate;   a diffusion prevention film between the through via plug and the substrate, the diffusion prevention film being on the protruding portion of the through via plug;   an insulating film liner between the diffusion prevention film and the substrate; and   an antipollution film covering the second side, the antipollution film being on the insulating film liner and being on the protruding portion of the through via plug.   
     
     
         14 . The semiconductor device as claimed in  claim 13 , wherein the insulating film liner is spaced apart from the second side of the substrate and the antipollution film is between the through via plug and the second side of the substrate. 
     
     
         15 . The semiconductor device as claimed in  claim 14 , wherein the antipollution film includes a first portion covering the second side of the substrate and a second portion bent from the first portion, the second portion being on the protruding portion of the through via plug. 
     
     
         16 . The semiconductor device as claimed in  claim 15 , wherein the antipollution film includes a third portion bent from the first portion, the third portion extending in a different opposite an extending direction of the first portion, and the third portion being between the diffusion prevention film and the substrate. 
     
     
         17 . The semiconductor device as claimed in  claim 16 , wherein a height of the third portion is equal to or less than a thickness of the insulating film liner. 
     
     
         18 . The semiconductor device as claimed in  claim 13 , wherein the insulating film liner is between a portion of the diffusion prevention film on the protruding portion of the through via plug and a portion of the antipollution film on the protruding portion of the through via plug. 
     
     
         19 . The semiconductor device as claimed in  claim 13 , wherein the insulating film liner and the antipollution film are formed of different materials. 
     
     
         20 . The semiconductor device as claimed in  claim 19 , wherein the insulating film liner is formed of a silicon oxide film and the antipollution film is formed of a silicon nitride film.