US2012235179A1PendingUtilityA1

Measuring Method, Inspection Method, Inspection Device, Semiconductor Device, Method of Manufacturing a Semiconductor Device, and Method of Manufacturing an Element Substrate

Assignee: HIROKI MASAAKIPriority: May 15, 2001Filed: May 31, 2012Published: Sep 20, 2012
Est. expiryMay 15, 2021(expired)· nominal 20-yr term from priority
Inventors:Masaaki Hiroki
H10P 74/00G01R 31/26G01R 31/265G01R 31/01G01R 19/0084G01R 1/07
54
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Claims

Abstract

An inspection method which simplifies an inspection step by eliminating the need to set probes on wiring or probe terminals, and an inspection device for performing the inspection step. A voltage is applied to each of inspected circuits or circuit elements to operate the same. Signal processing is performed on an output from each inspected circuit or circuit element during operation to form a signal (operation information signal) including information on the operating condition of the circuit or the circuit element. The operation information signal is amplified and the amplitude of an alternating current voltage separately input is modulated with the amplified operation information signal. The voltage of the modulated alternating current is read in a non-contact manner to determine whether the corresponding circuit or circuit element is non-defective or defective.

Claims

exact text as granted — not AI-modified
1 - 59 . (canceled) 
     
     
         60 . A semiconductor device comprising:
 a display portion over a substrate;   a drive circuit for the display portion over the substrate;   a coil configured to generate voltage; and   a circuit configured to shape the voltage to generate a driving signal for the display portion or the drive circuit.   
     
     
         61 . The semiconductor device according to  claim 60 , wherein the substrate is a glass substrate. 
     
     
         62 . The semiconductor device according to  claim 60 , wherein the display portion is an active matrix display portion. 
     
     
         63 . The semiconductor device according to  claim 60 , wherein the display portion comprises a thin film transistor. 
     
     
         64 . The semiconductor device according to  claim 60 , wherein the drive circuit is a signal line drive circuit or a scanning line drive circuit 
     
     
         65 . The semiconductor device according to  claim 60 , wherein the voltage is generated by electromagnetic induction. 
     
     
         66 . A semiconductor device comprising:
 a display portion over a substrate;   a drive circuit for the display portion over the substrate;   a coil configured to generate voltage over the substrate; and   a circuit configured to shape the voltage to generate a driving signal for the display portion or the drive circuit.   
     
     
         67 . The semiconductor device according to  claim 66 , wherein the substrate is a glass substrate. 
     
     
         68 . The semiconductor device according to  claim 66 , wherein the display portion is an active matrix display portion. 
     
     
         69 . The semiconductor device according to  claim 66 , wherein the display portion comprises a thin film transistor. 
     
     
         70 . The semiconductor device according to  claim 66 , wherein the drive circuit is a signal line drive circuit or a scanning line drive circuit 
     
     
         71 . The semiconductor device according to  claim 66 , wherein the voltage is generated by electromagnetic induction. 
     
     
         72 . A semiconductor device comprising:
 a display portion over a substrate;   a drive circuit for the display portion over the substrate;   a coil configured to generate voltage;   a first circuit configured to shape the voltage to generate a driving signal for the display portion or the drive circuit; and   a second circuit configured to rectify the voltage to generate a power supply voltage for the display portion or the drive circuit.   
     
     
         73 . The semiconductor device according to  claim 72 , wherein the substrate is a glass substrate. 
     
     
         74 . The semiconductor device according to  claim 72 , wherein the display portion is an active matrix display portion. 
     
     
         75 . The semiconductor device according to  claim 72 , wherein the display portion comprises a thin film transistor. 
     
     
         76 . The semiconductor device according to  claim 72 , wherein the drive circuit is a signal line drive circuit or a scanning line drive circuit 
     
     
         77 . The semiconductor device according to  claim 72 , wherein the voltage is generated by electromagnetic induction.

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