Transparent electrode substrate, precursor transparent electrode substrate, and method for manufacturing transparent electrode substrate

Abstract

In a transparent electrode substrate including a transparent electrode film composed of a crystallized ITO film in which an ITO film is crystallized by annealing, the present invention has an object of blocking movement of substances such as volatile components within a color filter layer to the transparent electrode film. The transparent electrode substrate ( 1 ) of the present invention includes a transparent substrate ( 2 ), an amorphous transparent conductive film ( 5 ) disposed on the upper side of the aforementioned transparent substrate ( 2 ), and a transparent electrode film ( 4 ) disposed on the upper side of the aforementioned amorphous transparent conductive film ( 5 ) and composed of a crystallized ITO film. Here, the transparent electrode film ( 4 ) is obtained by annealing the ITO film formed by a sputtering method or the like, and at the time of this annealing, the amorphous transparent conductive film ( 5 ) maintains the amorphous state and blocks the movement of the substances to the transparent electrode film ( 4 ) from the color filter layer ( 3 ) that is underneath it.

1 . A transparent electrode substrate comprising:
 a transparent substrate;   an amorphous transparent conductive film disposed on an upper side of said transparent substrate; and   a transparent electrode film disposed on an upper side of said amorphous transparent conductive film, the transparent electrode film being made of a crystallized ITO film.   
     
     
         2 . The transparent electrode substrate according to  claim 1 , wherein a color filter layer is disposed underneath the amorphous transparent conductive film. 
     
     
         3 . The transparent electrode substrate according to  claim 2 , wherein the color filter layer includes ink materials supplied by an inkjet method. 
     
     
         4 . The transparent electrode substrate according to any one of  claim 1 , wherein the amorphous transparent conductive film is an IZO film. 
     
     
         5 . The transparent electrode substrate according to  claim 4 , wherein the IZO film is formed by a sputtering method. 
     
     
         6 . The transparent electrode substrate according to  claim 4 , wherein the thickness of the IZO film is 300 to 500 angstroms. 
     
     
         7 . A precursor transparent electrode substrate comprising:
 a transparent substrate;   an amorphous transparent conductive film disposed on an upper side of said transparent substrate; and   an ITO film disposed on an upper side of said amorphous transparent conductive film, said ITO film being to be crystallized to become a crystallized ITO film by annealing.   
     
     
         8 . The precursor transparent electrode substrate according to  claim 7 , wherein a color filter layer is disposed underneath the amorphous transparent conductive film. 
     
     
         9 . The precursor transparent electrode substrate according to  claim 8 , wherein the color filter layer includes ink materials supplied by an inkjet method. 
     
     
         10 . The precursor transparent electrode substrate according to any  claim 7 , wherein the amorphous transparent conductive film is an IZO film. 
     
     
         11 . The precursor transparent electrode substrate according to  claim 10 , wherein the IZO film is formed by a sputtering method. 
     
     
         12 . The precursor transparent electrode substrate according to  claim 10 , wherein the thickness of the IZO film is  300  to  500  angstroms. 
     
     
         13 . A method for manufacturing a transparent electrode substrate comprising:
 an amorphous transparent conductive film formation step of forming an amorphous transparent conductive film by a sputtering method on an upper side of a color filter layer formed on a transparent substrate;   an ITO film formation step of forming an ITO film by a sputtering method on an upper side of said amorphous transparent conductive film so as to form a precursor transparent electrode substrate; and   an annealing step of annealing said ITO film in said precursor transparent electrode substrate to crystallize said ITO film, thus obtaining a transparent electrode substrate.