Light-emitting semiconductor device using group iii nitrogen compound

Abstract

A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming a high carrier concentration N + -layer satisfying the formula (Al x3 Ga 1-x3 ) y3 In 1-y3 N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Al x1 Ga y1 In 1-x1-y1 N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N + -layer, and forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Al x2 Ga 1-x2 N, wherein 0≦x2≦1.

1 . A method of producing a light-emitting semiconductor device of a group III nitride compound, said method comprising:
 forming a high carrier concentration N + -layer satisfying formula (Al x3 Ga 1-x3 ) y3 In 1-y3 N, wherein 0≦x3≦1, 0≦y3≦1, and 0≦x3+y3≦1;   forming an emission layer of a group III nitride compound semiconductor satisfying formula, Al x1 Ga y1 In 1-x1-y1 N, where 0≦x1≦y1≦1, 0≦y1≦1, and 0≦x1+y1≦1, on said high carrier concentration layer N + -layer; and   forming a P-layer of a P-type conduction, on said emission layer, said P-layer comprising aluminum gallium nitride satisfying formula Al x2 Ga 1-x2 N, wherein 0≦x2≦1.   
     
     
         2 . A semiconductor light emitting device, comprising:
 an n-type clad layer consisting of a gallium nitride base compound semiconductor;   an active layer consisting of a gallium nitride based compound semiconductor, said active layer comprising a material having a band gap energy smaller than that of said n-type clad layer; and   a p-type clad layer consisting of a gallium nitride based compound semiconductor, said p-type clad layer comprising a material having a band gap energy greater than that of said active layer, and sandwiching said active layer accompanying with said n-type clad layer,   wherein said materials of said n-type clad layer and said p-type clad layer are selected as to make the band gap energy of said n-type clad layer smaller than the band gap energy of said p-type clad layer.   
     
     
         3 . A semiconductor light emitting device, comprising:
 a substrate; and   GaN-type compound semiconductor layers stacked on the substrate, the GaN-type layers including:
 at least one active layer; 
 at least one n-type layer; and 
 at least one p-type layer, 
   wherein a band gap energy of the one n-type layer is smaller than a band gap energy of the one p-type layer.