High-temperature furnace and method for converting organic materials to synthesis gas

Abstract

High-temperature apparatus ( 10 ) for converting an starting material (M) to a synthesis gas (G) and comprising a feeding device ( 30 ) and a rotationally symmetrical furnace pipe ( 20 ) having a rotation axis (R). The feeding device ( 30 ) conducts the starting material (M) into an inner chamber (I) of the furnace pipe ( 20 ), and conveying elements ( 22 ) are arranged in the inner chamber (I) of the furnace pipe ( 20 ) in order to convey the starting material (M) in the direction of an exit side (A) of the furnace pipe ( 20 ). The apparatus ( 10 ) comprises an elongate resistance heating ( 23 ), which protrudes into the interior (I) of the furnace pipe ( 20 ) and which comprises at least one hot zone (H 1 ) and a less hot zone (H 2 ), wherein the hot zone (H 1 ) follows the less hot zone (H 2 ) as viewed from the entry zone (E), and wherein the resistance heating ( 23 ) is configured such that a temperature that is above 1200° C., is achievable in the inner chamber (I) of the furnace pipe ( 20 ).

1 - 17 . (canceled) 
     
     
         18 . High-temperature apparatus ( 10 ) for converting an organic starting material (M) to a synthesis gas (G), wherein the high-temperature apparatus ( 10 ) comprises a feeding device ( 30 ) and a rotationally symmetrical furnace pipe ( 20 ) having a rotation axis (R), wherein the starting material (M) is feedable by the feeding device ( 30 ) into an inner chamber (I) of the furnace pipe ( 20 ) in the region of an entry zone (E), and wherein conveying elements ( 22 ) are arranged in the inner chamber (I) of the furnace pipe ( 20 ) for conveying the starting material (M) to an exit side (A) of the furnace pipe ( 20 ), characterized in that
 a rotary motion of the furnace pipe ( 20 ) about the rotation axis (R) causes the conveying of the starting material (M) in the direction of the exit side (A) of the furnace pipe ( 20 ),   the high-temperature apparatus ( 10 ) comprises an elongate resistance heating ( 23 ), which protrudes from the exit side (A) of the furnace pipe ( 2 ) into the interior (I) of the furnace pipe ( 20 ) and which comprises at least one hot zone (H 1 ) and a less hot zone (H 2 ), wherein for this purpose the resistance heating ( 23 ) has a greater resistance in the region of the hotter zone (H 1 ) than in the region of the less hot zone (H 2 ), and wherein the hot zone (H 1 ) follows the less hot zone (H 2 ) as viewed from the entry zone (E), and wherein   the resistance heating ( 23 ) is configured such that an operating temperature that is above 1200° C. is achievable in the inner chamber (I) of the furnace pipe ( 20 ) in the region of the hot zone (H 1 ).   
     
     
         19 . High-temperature apparatus ( 10 ) according to  claim 18 , characterized in that the resistance heating ( 23 ) comprises two legs running parallel. 
     
     
         20 . High-temperature apparatus ( 10 ) according to  claim 18 , characterized in that the resistance heating ( 23 ) comprises silicon carbide (SiC). 
     
     
         21 . High-temperature apparatus ( 10 ) according to  claim 18 , characterized in that the resistance heating ( 23 ) comprises two or more heating zones (H 1 , H 2 ). 
     
     
         22 . High-temperature apparatus ( 10 ) according to  claim 18 , characterized in that the resistance heating ( 23 ) is supported in a radial bearing ( 28 ) at least at one position in the inner chamber (I) of the furnace pipe ( 20 ) such that compensation motions of the resistance heating ( 23 ) parallel to the rotation axis (R) are possible. 
     
     
         23 . High-temperature apparatus ( 10 ) according to  claim 18 , characterized in that the resistance heating ( 23 ) is coated with a glass-like ceramic material ( 43 ) at least in the hot zone (H 1 ). 
     
     
         24 . High-temperature apparatus ( 10 ) according to  claim 18 , characterized in that the furnace pipe ( 20 ) is coated interiorly and externally with a glass-like ceramic material ( 43 ) at least in the hot zone 
     
     
         25 . High-temperature apparatus ( 10 ) according to  claim 18 , characterized in that a water or vapour feeding device ( 33 ) is arranged in the region of the entry zone (E) in order to be capable of supplying water or water vapour (W) into the interior (I) of the furnace pipe ( 20 ). 
     
     
         26 . High-temperature apparatus ( 10 ) according to  claim 18 , characterized in that a water or vapour feeding device ( 29 ) is arranged in the region of the exit side (A), preferably in the region of a gas exit ( 25 ) in order to be capable of supplying water or water vapour (W). 
     
     
         27 . High-temperature apparatus ( 10 ) according to  claim 18 , characterized in that the high-temperature apparatus ( 10 ) is configured such that in operation, three temperature zones are lined up as follows:
 a first temperature zone having an operation temperature between 800° C. and 1000° C.;   a second temperature zone having an operation temperature above 1200° C.;   a third temperature zone having an operation temperature that is approximately 10% to 40% below the operation temperature of the second temperature zone.   
     
     
         28 . Method for converting an organic starting material (M) to a gaseous product (G) in a high-temperature apparatus ( 10 ), wherein the conversion proceeds progressively in the inner chamber (I) of a furnace pipe ( 20 ) of the high-temperature apparatus ( 10 ), characterized in that the method comprises the following steps:
 feeding the starting material (M) n the region of an entry zone (E) into the inner chamber (I) i,   turning the furnace pipe ( 20 ) about a rotation axis (R) in order to convey the starting material (M) in the inner chamber (I) from the entry zone (E) to an exit side (A),   operating an elongated resistance heating ( 23 ) arranged in the inner chamber (I) such that, as viewed from the entry zone (E), a hotter zone (H 1 ) following a less hot zone (H 2 ) arises,   
       wherein during the conveying through the inner chamber (I) and during the conversion, the starting material (M) proceeds through a first temperature zone having an operating temperature between 800° C. and 1000° C., which is followed by a second temperature zone having an operating temperature above 1200° C. and a third temperature zone having an operating temperature that is approximately 10% to 40% below the operating temperature of the second temperature zone. 
     
     
         29 . Method according to  claim 28 , characterized in that water or water vapour is supplied into the first temperature zone. 
     
     
         30 . Method according to  claim 28 , characterized in that the second temperature zone concerns an ultra-high-temperature zone, the operating temperature of which is the range of about 1300° C. 
     
     
         31 . Method according to  claim 28 , characterized in that the third temperature zone concerns a stabilization zone, the operating temperature of which is the range of about 1000° C. 
     
     
         32 . Method according to  claim 28 , characterized in that water or water vapour (W) is supplied in the region of the exit side (A). 
     
     
         33 . Method according to  claim 28 , characterized in that a synthesis gas is delivered in the region of the exit side (A) as a gaseous product (G) which comprises substantially carbon monoxide (CO) and hydrogen (H 2 ). 
     
     
         34 . High-temperature apparatus ( 10 ) according to  claim 19 , characterized in that the resistance heating ( 23 ) comprises silicon carbide (SiC). 
     
     
         35 . High-temperature apparatus ( 10 ) according to  claim 19 , characterized in that the resistance heating ( 23 ) comprises two or more heating zones (H 1 , H 2 ). 
     
     
         36 . Method according to  claim 29 , characterized in that the second temperature zone concerns an ultra-high-temperature zone, the operating temperature of which is the range of about 1300° C. 
     
     
         37 . Method according to  claim 29 , characterized in that water or water vapour (W) is supplied in the region of the exit side (A).