Formation of Selenide, Sulfide or Mixed Selenide-Sulfide Films on Metal or Metal Coated Substrates

Abstract

A method of forming a metal-coated substrate having a CuInGaR 2 film on a surface of the metal coating is performed in such a manner that reaction of the metal with Se is substantially prevented, wherein R is Se or a combination of Se and S and wherein the metal is selected from the group consisting of Mo, W, Cr, Ta, Nb, V and Ti. The method includes the steps of: providing a precursor film on the surface of the metal coating, wherein the metal coating contains oxygen in an amount sufficient to inhibit reaction of the metal with Se; and selenizing the precursor film; wherein said selenizing is limited to providing only that amount of Se required to form the CuInGaR 2 film.

1 - 7 . (canceled) 
     
     
         8 . A method of forming a metal-coated substrate having a CuInGaR 2  film on a surface of the metal coating in such a manner that reaction of the metal with Se is substantially prevented, wherein R is Se or a combination of Se and S and wherein the metal is selected from the group consisting of Mo, W, Cr, Ta, Nb, V and Ti, comprising the steps of:
 providing a precursor film on the surface of the metal coating, wherein the metal coating contains oxygen in an amount sufficient to inhibit reaction of the metal with Se; and   selenizing the precursor film;   wherein said selenizing is limited to providing only that amount of Se required to form the CuInGaR 2  film.   
     
     
         9 . The method according to  claim 8  wherein the substrate is a polymeric film. 
     
     
         10 . The method according to  claim 8  wherein the substrate is a metal substrate. 
     
     
         11 . The method according to  claim 8  wherein the substrate is a glass substrate. 
     
     
         12 . The method according to  claim 8  wherein the metal is Mo. 
     
     
         13 . The method according to  claim 12  wherein the amount of oxygen is 6-8 atomic percent. 
     
     
         14 . The method according to  claim 8  wherein the metal is selected from the group consisting of W, Cr, Ta, Nb, V and Ti.