LED Packaging Structure and Fabricating Method Thereof

Abstract

A light emitting diode (LED) packaging structure includes a base, a LED chip, a gel-blocking structure and a phosphor layer. The LED chip disposed on the base and electrically connected to the base. The LED chip having a substrate and a semiconductor layer formed on the substrate. The gel-blocking structure is disposed on the substrate of the LED chip and surrounding the semiconductor layer. The phosphor layer is filled within a space defined by the gel-blocking structure, the substrate and the semiconductor layer. The present invention also discloses a fabricating method of the LED packaging structure.

1 . A light emitting diode packaging structure, comprising:
 a base;   a LED chip disposed on the base and electrically connected to the base, the LED chip having a substrate and at least a semiconductor layer formed on the substrate; and   a gel-blocking structure disposed on the substrate of the LED chip and surrounding the semiconductor layer, the gel-blocking structure including a first metal layer and a second metal layer formed on the first metal layer.   
     
     
         2 . A light emitting diode packaging structure according to  claim 1 , further comprising a phosphor layer filled within a space defined by the gel-blocking structure, the substrate, and the semiconductor layer, 
     
     
         3 . A light emitting diode packaging structure according to  claim 1 , further comprising an encapsulant disposed on the base and covering the LED chip. 
     
     
         4 . A light emitting diode packaging structure according to  claim 1 , wherein the gel-blocking structure is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof. 
     
     
         5 . A light emitting diode packaging structure according to  claim 1 , wherein the LED chip further includes a first electrode and a second electrode, wherein the first electrode is disposed on a side of the substrate of the LED chip and electrically connected to the base, and wherein the second electrode is disposed on the semiconductor layer. 
     
     
         6 . A light emitting diode packaging structure according to  claim 5 , wherein the first electrode is electrically connected to the substrate of the LED chip, and wherein the second electrode is electrically connected to a pad on the base. 
     
     
         7 . A light emitting diode packaging structure according to  claim 6 , wherein the second electrode is electrically connected to the pad on the base by a conducting wire. 
     
     
         8 . A light emitting diode packaging structure according to  claim 1 , wherein the LED chip further includes a first electrode and a second electrode, and wherein the first electrode and the second electrode are opposite to each other and are disposed on the semiconductor layer of the LED chip. 
     
     
         9 . A light emitting diode packaging structure according to  claim 8 , wherein the first electrode and the second electrode are each electrically connected to a respective pad on the base by a respective conducting wire. 
     
     
         10 . A light emitting diode packaging structure according to  claim 1 , wherein the phosphor layer includes at least a phosphor powder and an encapsulating gel. 
     
     
         11 . A method for fabricating a light emitting diode packaging structure, comprising:
 providing a base;   disposing a LED chip on the base and electrically connecting the LED chip to the base, the LED chip including a substrate and a semiconductor layer formed on the substrate; and   disposing a gel-blocking structure on the substrate of the LED chip and surrounding the semiconductor layer by forming a first metal layer by evaporation deposition and forming a second metal layer on the first metal layer by electroplating.   
     
     
         12 . A method according to  claim 11 , further comprising filling a phosphor layer in a space defined by the gel-blocking structure, the substrate, and the semiconductor layer. 
     
     
         13 . A method according to  claim 11 , further comprising forming an encapsulant on the base and covering the LED chip. 
     
     
         14 . A method according to  claim 11 , wherein the gel-blocking structure is made of material selected from the group consisting of Au, Cr, Cu, Ag, Pt, Ti, Al, and the alloy thereof. 
     
     
         15 . A method according to  claim 11 , wherein the LED chip further includes a first electrode and a second electrode, wherein the first electrode is disposed on a side of the substrate of the LED chip and is connected to the base, and wherein the second electrode is disposed on the semiconductor layer. 
     
     
         16 . A method according to  claim 15 , wherein the first electrode is electrically connected to the substrate of the LED chip, and wherein the second electrode is electrically connected to a pad on the base. 
     
     
         17 . A method according to  claim 16 , wherein the second electrode is electrically connected to the pad on the base by a conducting wire. 
     
     
         18 . A method according to  claim 11 , wherein the LED chip further includes a first electrode and a second electrode, and wherein the first electrode and the second electrode are opposite to each other and are disposed on the semiconductor layer of the LED chip. 
     
     
         19 . A method according to  claim 18 , wherein the first electrode and the second electrode are each electrically connected to a pad on the base by a conducting wire. 
     
     
         20 . A method according to  claim 11 , wherein the phosphor layer includes at least a phosphor powder and an encapsulating gel.