Color building-integrated photovoltaic (bipv) panel

Abstract

In one aspect of the present invention, a photovoltaic panel includes a substrate, a reflective layer formed on the substrate, a first conductive layer formed on the reflective layer, an active layer formed on the first conductive layer, and a second conductive layer formed on the active layer. The reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the photovoltaic device for light incident on the substrate has a maximum in a selected wavelength range in the visible spectrum.

1 . A building integrated photovoltaic (BIPV) panel, comprising:
 a substrate;   a reflective layer formed on the substrate, the reflective layer having a plurality of first windows exposing a plurality of first portions of the substrate;   a first conductive layer formed on the reflective layer and on the plurality of first portions of the substrate exposed by the plurality of first windows, the first conductive layer having a plurality of second windows exposing a plurality of second portions of the substrate, each second window being within a respective first window;   an active layer formed on the first conductive layer, the active layer having a plurality of third windows exposing a plurality of first portions of the first conductive layer, each third window being within a respective first window; and   a second conductive layer formed on the active layer, the second conductive layer having a plurality of fourth windows exposing a plurality of second portions of the first conductive layer, each fourth window being within a respective first window,   wherein the reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the BIPV panel for light incident on the substrate has a maximum in a selected wavelength range in the visible spectrum.   
     
     
         2 . The BIPV panel of  claim 1 , wherein the index of refraction of the reflective layer ranges from about 1.5 to about 6.5. 
     
     
         3 . The BIPV panel of  claim 1 , wherein the selected wavelength range corresponds to a color of purple, dark blue, light blue, silver, gold, orange, red, or brown. 
     
     
         4 . The BIPV panel of  claim 1 , wherein the reflective layer is formed of an insulation material, a semiconductor material, or a compound comprising at least one of silicon, oxygen and nitrogen elements. 
     
     
         5 . The BIPV panel of  claim 4 , wherein the compound comprises silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, or a combination thereof. 
     
     
         6 . The BIPV panel of  claim 4 , wherein the semiconductor material comprises amorphous silicon (a-Si), micro-crystalline silicon (μc-Si), or a combination thereof. 
     
     
         7 . The BIPV panel of  claim 4 , wherein the thickness of the reflective layer ranges from about 1 nm to about 600 nm. 
     
     
         8 . The BIPV panel of  claim 1 , wherein each of the first conductive layer and the second conductive layer comprises a transparent conducting oxide (TCO) or a metal. 
     
     
         9 . The BIPV panel of  claim 1 , wherein the active layer comprises a layer of amorphous silicon (a-Si) and a layer of micro-crystalline silicon (μc-Si). 
     
     
         10 . A method of forming a building integrated photovoltaic (BIPV) panel, comprising the steps of:
 depositing a reflective layer on a substrate;   scribing the reflective layer to form a plurality of first windows exposing a plurality of first portions of the substrate;   depositing a first conductive layer on the reflective layer and on the plurality of first portions of the substrate exposed by the plurality of first windows;   scribing the first conductive layer to form a plurality of second windows exposing a plurality of second portions of the substrate, each second window being within a respective first window;   depositing an active layer on the first conductive layer;   scribing the active layer to form a plurality of third windows exposing a plurality of first portions of the first conductive layer, each third window being within a respective first window;   depositing a second conductive layer on the active layer; and   scribing the second conductive layer to form a plurality of fourth windows exposing a plurality of second portions of the first conductive layer, each fourth window being within a respective first window,   wherein the reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the BIPV panel for light incident on the substrate has a maximum in a selected wavelength range in the visible spectrum.   
     
     
         11 . The method of  claim 10 , wherein the selected wavelength range corresponds to a color of purple, dark blue, light blue, silver, gold, orange, red, or brown. 
     
     
         12 . The method of  claim 10 , wherein the reflective layer is formed of an insulation material, a semiconductor material, or a compound comprising at least one of silicon, oxygen and nitrogen elements. 
     
     
         13 . The method of  claim 12 , wherein the compound comprises silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, or a combination thereof. 
     
     
         14 . The method of  claim 12 , wherein the semiconductor material comprises amorphous silicon (a-Si), micro-crystalline silicon (μc-Si), or a combination thereof. 
     
     
         15 . The method of  claim 10 , wherein each of the steps of scribing is performed using a laser. 
     
     
         16 . A building integrated photovoltaic (BIPV) panel, comprising:
 a substrate;   a first conductive layer;   an active layer formed on the first conductive layer;   a second conductive layer formed on the active layer; and   a reflective layer formed between the substrate and the first conductive layer, or formed on the second conductive layer such that the first conductive layer is formed on the substrate, wherein the reflective layer has an index of refraction and a thickness such that the reflectance spectrum of the BIPV panel for light incident thereon has a maximum in a selected wavelength range in the visible spectrum.   
     
     
         17 . The BIPV panel of  claim 16 , wherein the selected wavelength range corresponds to a color of purple, dark blue, light blue, silver, gold, orange, red, or brown. 
     
     
         18 . The BIPV panel of  claim 16 , wherein the index of refraction of the reflective layer ranges from about 1.5 to about 6.5. 
     
     
         19 . The BIPV panel of  claim 16 , wherein the reflective layer is formed of an insulation material, a semiconductor material, or a compound comprising at least one of silicon, oxygen and nitrogen elements. 
     
     
         20 . The BIPV panel of  claim 19 , wherein the compound comprises silicon oxide, silicon nitride, silicon oxynitride, titanium oxide, or a combination thereof. 
     
     
         21 . The BIPV panel of  claim 19 , wherein the semiconductor material comprises amorphous silicon (a-Si), micro-crystalline silicon (μc-Si), or a combination thereof. 
     
     
         22 . The BIPV panel of  claim 19 , wherein the thickness of the reflective layer ranges from about 1 nm to about 600 nm. 
     
     
         23 . The BIPV panel of  claim 16 , wherein each of the first conductive layer and the second conductive layer comprises a transparent conducting oxide (TCO) or a metal. 
     
     
         24 . The BIPV panel of  claim 16 , wherein the active layer comprises amorphous silicon (a-Si) or micro-crystalline silicon (μc-Si), or a combination thereof.