Multiple-layer, multiple film having the same and electronic device having the same

Abstract

The present invention provides a multiple layer that comprises two or more first inorganic material layers; and one or more second inorganic material layers that are positioned between the two first inorganic material layers and have the thickness of less than 5 nm, in which the first inorganic material layer is formed of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and the second inorganic material layer is formed of one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof, a multiple film that comprises the multiple layer, and an electronic device that comprises the multiple film.

1 - 28 . (canceled) 
     
     
         29 . An electronic device comprising:
 a multiple layer comprising two or more first inorganic material layers; and   one or more second inorganic material layers that are positioned between the two first inorganic material layers, the second inorganic material layer having the thickness of less than 5 nm,   wherein the first inorganic material layer is formed of one or more materials that are selected from the group consisting of silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO, and   the second inorganic material layer is formed of one or more materials that are selected from the group consisting of magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof.   
     
     
         30 . The electronic device as set forth in  claim 29 , wherein the multiple layer is used as a protective cover, or a packaging material. 
     
     
         31 . The electronic device as set forth in  claim 29 , wherein the electronic device is an organic or inorganic light emitting body, a display device, or a photovoltaic device. 
     
     
         32 . The electronic device as set forth in  claim 29 , wherein the thickness of the second inorganic material layer is not less than 0.1 nm and less than 5 nm. 
     
     
         33 . The electronic device as set forth in  claim 29 , wherein the thickness of the multiple layer is in the range of 10˜5000 nm. 
     
     
         34 . The electronic device as set forth in  claim 29 , wherein the silicon oxides are SiO x  (x is a real number in the range of 1.0 to 2.5), the silicon carbide is SiC, the silicon nitride is SiO a N b  (the sum of a and b is a real number in the range of 1.0 to 2.5), and the aluminum nitride is AlO c N d  (the sum of c and d is a real number in the range of 1.0 to 2.0). 
     
     
         35 . The electronic device as set forth in  claim 29 , wherein the electronic device comprises a multiple film comprising:
 a base layer;   the multiple layer that is provided on at least one side of the base layer.   
     
     
         36 . The electronic device as set forth in  claim 35 , wherein the base layer is formed of one or more materials that are selected from polyethylene terephthalate (PET), polyether sulfone (PES), polycarbonate (PC), polyethylene naphthalate (PEN), polyimide (PI), polyarylate and an epoxy resin. 
     
     
         37 . The electronic device as set forth in  claim 35 , wherein the base layer further comprises one or more that are selected from a filler, an organic and inorganic hybrid material, and a mixture thereof. 
     
     
         38 . The electronic device as set forth in  claim 35 , wherein the multiple film further comprises a coating layer that is provided on one side or both sides of the multiple layer. 
     
     
         39 . An electronic device comprising:
 a multiple layer comprising two or more first sub multiple layers; and   one or more second sub multiple layers,   wherein at least one layer of the second sub multiple layer is positioned between the two first sub multiple layers, the thickness of the second sub multiple layer is less than 5 nm, and the first sub multiple layer is thicker than the second sub multiple layer, and   the first and second sub multiple layers are formed of a mixture of one or more materials that are selected from silicon oxides, silicon carbide, silicon nitride, aluminum nitride and ITO and one or more materials that are selected from magnesium, calcium, aluminum, gallium, indium, zinc, tin, barium, and oxides and fluorides thereof.   
     
     
         40 . The electronic device as set forth in  claim 39 , wherein the multiple layer is used as a protective cover, or a packaging material. 
     
     
         41 . The electronic device as set forth in  claim 39 , wherein the electronic device is an organic or inorganic light emitting body, a display device, or a photovoltaic device. 
     
     
         42 . The electronic device as set forth in  claim 39 , wherein the thickness of the second sub multiple layer is not less than 0.1 nm and less than 5 nm. 
     
     
         43 . The electronic device as set forth in  claim 39 , wherein the thickness of the multiple layer is in the range of 10˜5000 nm. 
     
     
         44 . The electronic device as set forth in  claim 39 , wherein the silicon oxides are SiO x  (x is a real number in the range of 1.0 to 2.5), the silicon carbide is SiC, the silicon nitride is SiO a N b  (the sum of a and b is a real number in the range of 1.0 to 2.5), and the aluminum nitride is AlO c N d  (the sum of c and d is a real number in the range of 1.0 to 2.0). 
     
     
         45 . The electronic device as set forth in  claim 39 , wherein the electronic device comprises a multiple film comprising:
 a base layer;   the multiple layer that is provided on at least one side of the base layer.   
     
     
         46 . The electronic device as set forth in  claim 45 , wherein the base layer is formed of one or more materials that are selected from polyethylene terephthalate (PET), polyether sulfone (PES), polycarbonate (PC), polyethylene naphthalate (PEN), polyimide (PI), polyarylate and an epoxy resin. 
     
     
         47 . The electronic device as set forth in  claim 45 , wherein the base layer further comprises one or more that are selected from a filler, an organic and inorganic hybrid material, and a mixture thereof. 
     
     
         48 . The electronic device as set forth in  claim 45 , wherein the multiple film further comprises a coating layer that is provided on one side or both sides of the multiple layer.