Boron-doped diamond semiconductor

Abstract

First and second synthetic diamond regions are doped with boron. The second synthetic diamond region is doped with boron to a greater degree than the first synthetic diamond region, and in physical contact with the first synthetic diamond region. In a further example embodiment, the first and second synthetic diamond regions form a diamond semiconductor, such as a Schottky diode when attached to at least one metallic lead.

1 . A semiconductor device, comprising:
 a first synthetic diamond region doped with boron;   a second synthetic diamond region doped with boron, the second synthetic diamond region doped with boron to a greater degree than the first synthetic diamond region and in physical contact with the first synthetic diamond region, and wherein the second synthetic diamond region contains carbon-13 in an amount that reduces strain caused by the different boron doping of the first and second synthetic diamond regions by matching lattice structures of the first and second synthetic diamond regions; and   a first metal contact attached to the first synthetic diamond region and a second metal contact attached to the second synthetic diamond region to form a Schottky diode.   
     
     
         2 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions is a synthetic monocrystalline diamond. 
     
     
         3 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions comprises less than 1 ppm impurities not including a dopant. 
     
     
         4 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 2500 W/mK. 
     
     
         5 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions has a thermal conductivity greater than 2700 W/mk. 
     
     
         6 . The semiconductor device of  claim 1 , wherein at least one of the first and second synthetic diamond regions has a nitrogen concentration of less than 5 ppm. 
     
     
         7 . An integrated circuit, comprising:
 a first diamond region doped with boron;   a second diamond region doped with boron, the second diamond region doped with boron to a greater degree than the first diamond region and in physical contact with the first synthetic diamond region, wherein the first and second diamond regions contain different concentrations of C-13 to balance the lattice mismatch caused by the different levels of boron doping; and   a first metal contact attached to the first synthetic diamond region and a second metal contact attached to the second synthetic diamond region.   
     
     
         8 . The integrated circuit of  claim 7 , further comprising a diamond substrate. 
     
     
         9 . The integrated circuit of  claim 7 , wherein the diamond substrate is a monocrystalline synthetic diamond substrate. 
     
     
         10 . The integrated circuit of  claim 7 , wherein at least one of the first and second diamond regions is a synthetic monocristalline diamond. 
     
     
         11 . The integrated circuit of  claim 7 , wherein at least one of the first and second diamond regions has a nitrogen concentration of less than 5 ppm. 
     
     
         12 . An electronic device, comprising:
 a synthetic diamond semiconductor element comprising a first region doped with boron, and further comprising a second region doped with boron, the second synthetic diamond region doped with boron to a greater degree than the first synthetic diamond region and in physical contact with the first synthetic diamond element region, wherein a carbon-13 concentration in the second synthetic diamond region is adjusted to reduce lattice strain between the first and the second synthetic diamond regions caused by different boron doping levels, and further comprising a first metal contact attached to the first synthetic diamond region and a second metal contact attached to the second synthetic diamond region.   
     
     
         13 . The electronic device of  claim 12 , wherein the synthetic diamond semiconductor element comprises a Schottky diode. 
     
     
         14 . The electronic device of  claim 12 , wherein the synthetic diamond semiconductor element comprises an integrated circuit. 
     
     
         15 . The electronic device of  claim 14 , wherein the integrated further comprises a synthetic monocrystalline diamond substrate. 
     
     
         16 . The semiconductor device of  claim 14 , further comprising a monocrystalline diamond seed in physical contact with the first synthetic diamond region or the second synthetic diamond region. 
     
     
         17 . The semiconductor device of  claim 16 , wherein a portion of the diamond seed in contact with the first synthetic diamond region or the second synthetic diamond region includes hydrogen. 
     
     
         18 . The semiconductor device of  claim 17 , wherein the portion of the diamond seed is configured to separate from the first synthetic diamond region or the second synthetic diamond region within a range of 1100 degrees Celsius to 2400 degrees Celsius. 
     
     
         19 . The semiconductor device of  claim 17 , wherein the diamond seed includes a region having a lattice structure smaller than a lattice structure associated with the second synthetic diamond region.